Reliability and Processing Effects of Bandgap-Engineered SONOS (BE-SONOS) Flash Memory and Study of the Gate-Stack Scaling Capability

Wang, Szu-Yu; Lue, Hang-Ting; Du, Pei-Ying; Liao, Chien-Wei; Lai, Erh-Kun; Lai, Sheng-Chih; Yang, Lee‐Wei; Yang, Tahone; Chen, Kuang-Chao; Gong, Jeng; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih‐Yuan

doi:10.1109/tdmr.2008.922900

Cited by 16 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In another approach, ultrathin ONO stacks have been implemented as replacements of the tunnel oxide in the so-called band-engineered SONOS (BE-SONOS). Such a replacement enhances the erase operation without affecting the retention properties of the structure (Wang 2008).…”

Section: Recent Developments Of the Silicon Nitride Based Memory Cellmentioning

confidence: 99%

Charge-Trapping Non-Volatile Memories

Dimitrakis¹

2015

View full text Add to dashboard Cite

Section: Recent Developments Of the Silicon Nitride Based Memory Cellmentioning

confidence: 99%

Charge-Trapping Non-Volatile Memories

Dimitrakis¹

2015

View full text Add to dashboard Cite

“…For example, the bandgap-engineered tunneling oxide (BE-TOX) structure [7,8] has been reported to enhance key memory metrics such as fortifying device reliability and increasing speed. The BE-TOX structure has the advantage of a high erase speed through fast hole tunneling [9,10] and the suppression of direct tunneling in low electric fields by modifying the structure of the tunneling layer [11]. These advantages are characteristic of the selected strings.…”

Section: Introductionmentioning

confidence: 99%

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings

Cho,

Jung,

Kang

2024

Electronics

View full text Add to dashboard Cite

In this study, the channel potential of inhibited strings in 3D NAND flash memory using a bandgap-engineered tunneling oxide (BE-TOX) structure is analyzed. The equivalent oxide thickness (EOT) of the structure using BE-TOX was designed to be the same as the conventional 3D NAND flash memory, and the channel potentials of the down coupling phenomenon (DCP) and natural local self-boosting (NLSB) effect were analyzed. As a result, the BE-TOX structure was confirmed to have a higher channel potential in the DCP and NLSB than the conventional structure, making it relatively effective for program disturbance. The main reason for the difference in the channel potential between the BE-TOX and conventional structures is that adjacent cells have different threshold voltages (Vth). When the same program voltage (VPGM) and program time (TPGM) were applied during the program operation, Vth decreased in the BE-TOX structure, which increased the channel potential when DCP and NLSB occurred. Finally, a simulation was conducted by varying the thicknesses of the oxide and nitride in the BE-TOX structure. Despite the EOT being fixed and the thicknesses of both nitride and oxide being varied, the channel potential was affected.

show abstract

“…[ 62 ] The atomically thin BN also have the ability to manipulate the charge carrier density in the channel, by switching the capacitance states. Furthermore, these transistors can be combined to create multifunctional devices, such as the application in diodes, [ 58,63–65 ] rectifiers, [ 60,66,67 ] detectors, [ 4,65,68,69 ] light‐emitting diodes, [ 31,65,66 ] and photovoltaics, [ 5,67,70 ] which are promising candidates for future low‐power‐consumption smart integrated circuits. [ 71–74 ]…”

Section: Introductionmentioning

confidence: 99%

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Liu

Chen

Wang

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro‐ and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h‐BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub‐nanometer lengths to replace the use of thick and stiff blocking dielectrics in two‐terminal or three‐terminal devices. The use of atomically thin h‐BN or h‐BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high‐density on‐chip integrated circuits, which has recently earned considerable interest. While the research in h‐BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in‐depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h‐BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h‐BN‐based memories and logic circuits are discussed.

show abstract

Reliability and Processing Effects of Bandgap-Engineered SONOS (BE-SONOS) Flash Memory and Study of the Gate-Stack Scaling Capability

Cited by 16 publications

References 10 publications

Charge-Trapping Non-Volatile Memories

Charge-Trapping Non-Volatile Memories

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Contact Info

Product

Resources

About