Relaxors as High-ε-Materials for Multilayer and Thin Film Capacitors

Hofer, Christiane; Hoffmann, M.; Boettger, Ulrich; Waser, Rainer

doi:10.1080/00150190211242

Cited by 7 publications

(3 citation statements)

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“…[1][2][3] The addition of barium zirconate (BZ) to barium titanate (BT) allows for a variety of interesting phenomena to occur. Much like strontium titanate, barium zirconate has been used to shift the Curie point to lower temperatures to allow for the maximum in permittivity to occur in a temperature regime more favorable for room-temperature applications.…”

Section: Introductionmentioning

confidence: 99%

“…9 Several groups have investigated the dielectric and relaxor properties of this material in a thin film embodiment. 1,[10][11][12] Most of this work however, has utilized depositions of films on refractory or noble metal substrates. While practical for many applications, these substrate materials can impart limitations on other uses where substrate conformality, conductivity, or cost may be a factor.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

2005

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Barium titanate zirconate, Ba(Ti 1−x Zr x )O 3 (0 ഛ x ഛ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900°C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO 3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol% BaZrO 3 , the permittivity below T max became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti 1−x Zr x )O 3 was studied at room temperature and at T max for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at T max , and all compositions showed an increase in permittivity.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

2005

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“…This material offers opportunities for the development of various microwave devices such as tunable filters, resonators, phase shifters and microstrip lines and so on. For the improvement of the dielectric properties of BZT thin films, different methods of elaboration have been used: Chemical solution deposition [13], sputtering [14], pulsed laser deposition (PLD) [15], sol-gel [16], hydrothermal techniques [17] and recently plasma electrolyte oxidation [18]. Various works of the literature have focused on the choice of the substrate [19], optimizing deposition parameters [20], doping [21], buffer layer insertion [22].…”

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confidence: 99%

Doping effect on nanoscopic and macroscopic electrical properties of Barium Zirconate Titanate thin films

Tachafine

Fasquelle

Desfeux

et al. 2021

Spectroscopy Letters

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Lead-free Barium Zirconate Titanate thin films synthesized by sol-gel process were deposited on platinized silicon substrates. Atomic and piezoresponse force microscopies analysis have revealed low values for the surface roughness and local piezoelectric loops, respectively. Nanoscopic piezoelectric and ferroelectric properties decrease with zirconium content increasing. Dielectric measurements were made up to 1 MHz at room temperature. The highest dielectric permittivity and tunability are obtained for 10% of zirconium. Dielectric loss tangent decreases with frequency, zirconium content and electric field increasing. Thin films with 20% of zirconium could be particularly interesting for electronic applications.

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Characterization of Ba(Zr0.05 Ti0.95)O3 thin film prepared by sol-gel process

Cheng

Ding

et al. 2006

J Electroceram

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Ba(Zr 0.05 Ti 0.95 )O 3 (BZT) thin film (∼330 nm) was grown on Pt/Ti/SiO 2 /Si(100) substrate by a simple sol-gel process. The microstructure and the surface morphology of BZT thin film were studied by X-ray diffraction and atomic force microscopy. The optical properties of BZT thin film were obtained by spectroscopic ellipsometry. The optical bandgap was found to be 3.74 eV of direct-transition type. Ferroelectric and dielectric properties of BZT thin film were also discussed. The electrical measurements were conducted on BZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The results showed the film exhibited good ferroelectrity with remanent polarization and coercive electric field of 3.54 μC/cm 2 and 95.5 kV/cm, respectively. At 10 kHz, the dielectric constant and dielectric loss of the film are 201 and 0.029, respectively.

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Relaxors as High-ε-Materials for Multilayer and Thin Film Capacitors

Cited by 7 publications

References 0 publications

Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

Doping effect on nanoscopic and macroscopic electrical properties of Barium Zirconate Titanate thin films

Characterization of Ba(Zr0.05 Ti0.95)O3 thin film prepared by sol-gel process

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