Relaxed optics: The necessity of the creation and problem of the development

Trokhimchuck, Petro P.

doi:10.1109/caol.2003.1251247

Cited by 2 publications

(8 citation statements)

References 3 publications

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“…But thermal phenomena are the effects of second range order. The creation of "dangling" bonds are the phenomena of first range order [1]. It are photoinduced effects.…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

“…The thermal defects in InSb have p -type of conductivity [1]. Therefore the contradiction in the explanation of the cause the creation and annealing damages and activation impurity in InSb is founded on various charge states laser induced damages and thermal defects.…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

“…the processes of light scattering on stable centers (covalent bonds for InSb and InAs [1]). This process is caused of the generation high concentration of donor centers.…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

“…The receiving the n-layers on InSb p and InAs p after irradiation the impulse Ruby laser [1,2] allow have these devices. But best p-n junctions were be receiving with help mixed ion-laser irradiation (ion implantation and CO 2 -laser irradiation).…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

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<title>Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics</title>

Trokhimchuck

2008

SPIE Proceedings

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The basic problems of the receiving p-n junctions in ion implanted InSb Mg / after CO 2 -laser irradiation and in InSb pand InAs pafter Ruby laser irradiation are represented. Proper Volt-Ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. Basic cause of difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for Ruby laser irradiation and "damage"-absorption for CO 2 -laser irradiation).

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“…But thermal phenomena are the effects of second range order. The creation of "dangling" bonds are the phenomena of first range order [1]. It are photoinduced effects.…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

Section: Experimental Data and Discussionmentioning

confidence: 99%

“…the processes of light scattering on stable centers (covalent bonds for InSb and InAs [1]). This process is caused of the generation high concentration of donor centers.…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

Section: Experimental Data and Discussionmentioning

confidence: 99%

See 2 more Smart Citations

<title>Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics</title>

Trokhimchuck

2008

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…The receiving the n-layers on p -InSb and p -InAs after irradiation the impulse Ruby laser [1,2] allow to have these devices. But best p-n junctions were received with the help of mixed ion-laser irradiation (ion implantation and C02-laser irradiation).…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

The problem of the creation stable P-N junctions with help the methods of relaxed optics in InSb and InAs

Trokhimchuck

Proceedings of CAOL 2005. Second International Conference on Advanced Optoelectronics and Lasers, 2005.

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The basic problems of the receiving p-n junctions in ion implanted Mg+/IlnSb after C02-laser irradiation and in p -InSb and p -InAs after Ruby laser irradiation are represented. Proper volt-ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. A basic cause of the difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (selfabsorption for Ruby laser irradiation and "damage"-absorption for C02-laser irradiation).

show abstract

Relaxed optics: The necessity of the creation and problem of the development

Cited by 2 publications

References 3 publications

<title>Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics</title>

<title>Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics</title>

The problem of the creation stable P-N junctions with help the methods of relaxed optics in InSb and InAs

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