Proceedings of CAOL 2005. Second International Conference on Advanced Optoelectronics and Lasers, 2005.
DOI: 10.1109/caol.2005.1553879
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The problem of the creation stable P-N junctions with help the methods of relaxed optics in InSb and InAs

Abstract: The basic problems of the receiving p-n junctions in ion implanted Mg+/IlnSb after C02-laser irradiation and in p -InSb and p -InAs after Ruby laser irradiation are represented. Proper volt-ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. A basic cause of the difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (selfabsorption for Ruby laser irradiation and "damage"-absorption for C02-laser ir… Show more

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“…Here, the high-frequency limit permittivity, collision frequency, and plasma frequency of the carrier are respectively indicated by ε ∞ , ν c , and ω p . Here ε ∞ = 15.68 [34],…”
Section: Theoretical Model and Simulationmentioning
confidence: 99%
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“…Here, the high-frequency limit permittivity, collision frequency, and plasma frequency of the carrier are respectively indicated by ε ∞ , ν c , and ω p . Here ε ∞ = 15.68 [34],…”
Section: Theoretical Model and Simulationmentioning
confidence: 99%
“…However, our work is based on the ideal model without considering the influence of these factors. Hence, the formula for calculating the rate of absorption is obtained as [34]:…”
Section: Theoretical Model and Simulationmentioning
confidence: 99%