Relaxed lattice-mismatched growth of III–V semiconductors

Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment

“…Although issues which are analogous to those of GaAs/Si(1 0 0) heteroepitaxy apply to the growth of other III-V compound semiconductors such as indium phosphide (InP) and gallium phosphide (GaP) on Si(1 0 0), most studies use metal-organic vapor phase epitaxy (MOVPE) rather than MBE [9] for the latter materials due to the more established preparation of phosphorus containing materials [10]. Reliable process control and industrial The demand for large-scale production of sophisticated III-V devices such as LEDs, lasers, or multi-junction solar cells increases the desire for an improved heteroepitaxial III-V growth on Si(1 0 0) via MOVPE to benefit from more abundant alternative substrates, larger wafer sizes, improved mechanical properties, etc.…”

Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications

“…The growth of GaAs layer directly on the silicon substrate, present 3D mode and poor surface morphology is confronted to the large lattice mismatch (4.1%) and 62% in thermal expansion coefficients [4,5]. High density of dislocations and cracks are observed.…”

“…High density of dislocations and cracks are observed. However, the tensile stress between them limit the efficiency of GaAs based optoelectronic and electronic devices and their life duration [4]. Since the quality of a buffer layer is important for subsequent growth of a device layer, the research of alternative efficient buffer layer to improve the quality of GaAs layer on Si constitutes an idea in development.…”

“…For low cost solar cells structures, several techniques were proposed to obtain GaAs film on silicon (Si) with reduction of dislocation density and good surface morphology [1][2][3]. In fact, the silicon substrate has many advantages: low cost, large area availability and reasonable thermal conductivity [4].…”

Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

“…The growth of GaAs on Si allows the integration of GaAs devices with the Si technology [1][2]. However, the 4.1% large lattice mismatch results in a high defect density in the epilayer which alters the physical properties of the epilayer and the devices made of it.…”