Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications

Azeza, B.; Sfaxi, L.; Mghaieth, Ridha; Fouzri, A.; Maaref, Hichem

doi:10.1016/j.jcrysgro.2010.12.071

Cited by 13 publications

(4 citation statements)

References 19 publications

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“…Indeed, after the chemical dissolution of silicon skeleton, the rugged surface will be exposed to beam epitaxy. Additional details concerning the process as well as the morphological properties of the nanostructured Si surface and its impact on the quality of GaAs material grown on such Si surface can be found elsewhere [ 27 ].…”

Section: Resultsmentioning

confidence: 99%

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

et al. 2015

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This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n+-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n+-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

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Section: Resultsmentioning

confidence: 99%

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

et al. 2015

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“…Figure 4 presents the survey patterns obtained in the Bragg con guration, extracted for the GaAs/SiGe epilayer deposited on porous silicon (PSs and PSMLs). The presence of well-de ned re ection peak (110), ( 220) and (222) a rms the polycrystalline behavior of the GaAs layer [29], suggesting higher dislocation densities. This nding aligns with our earlier FE-SEM observations.…”

Section: Methodsmentioning

confidence: 93%

Tuning Performance: Strain Modulation of Gaas Layers Grown on Meso-Porous Silicon Substrates

Zeydi,

Saidi,

Hadj Alouane

et al. 2024

Preprint

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“…1. Next, the effect of rapid thermal cycle annealing (RTCA) [21][22][23][24][25][26] was verified by comparing the Q f and the D it . The C-V curves were measured before and after RTCA, which consisted of 3 × 7 minutes (21 minutes in total) of post-deposition annealing on a belt conveyor in an infrared-ray radiation oven in ambient atmosphere at 425 • C. The temperature used in RTCA was decided by this report we referred [6].…”

Section: A Samplementioning

confidence: 99%

Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance—Voltage Measurements

Satoh

Cesar

Lamers

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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We evaluated the fixed charge (Q f ) and the interface state density (Dit) from the capacitance-voltage (C-V) measurement before and after rapid thermal cycle annealing (RTCA) using p-type silicon in which the passivation was performed with aluminum oxide (Al2O3) film by atomic layer deposition (ALD). From C-V measurement we obtained the surface potential (VS), accumulation and depletion width, and as a result, energy band diagrams were produced. It was determined that a barrier height of approximately 100 mV was induced by fixed negative charges in the Al2O3 layer near the interface to the p-type Si substrate. The field effect of the Al2O3 passivation layer created by RTCA strongly remains without depending on the gate voltage (VG).

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Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications

Cited by 13 publications

References 19 publications

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

Tuning Performance: Strain Modulation of Gaas Layers Grown on Meso-Porous Silicon Substrates

Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance—Voltage Measurements

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