Relaxation kinetics of MBE grown GaAs(001) surfaces

Yoshinaga, A.; Fahy, M.R.; Dosanjh, S.; Zhang, J.; Neave, J.H.; Joyce, B. A.

doi:10.1016/0039-6028(92)90147-x

Cited by 12 publications

(4 citation statements)

References 15 publications

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“…The interpretation that there are two relaxation processes following the cessation of growth that result in a recovery of the intensity, is consistent with that observed following MBE growth of GaAs [13,20]. Based on Monte Carlo simulations Clarke and Vvedensky [21] interpret the fast process as a reduction in the "dendricity" of surface clusters and the slow process as a gross smoothing of the remaining surface.…”

Section: Discussionsupporting

confidence: 72%

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Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs by Pulsed Laser Deposition

McCamy

Aziz

1996

MRS Proc.

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Film growth consists of two basic processes, deposition and surface relaxation, with opposing effects on the evolution of surface roughness. The pulsed-laser deposition (PLD) growth process has the unique feature of having periods of very high deposition rates on µs time scales followed by periods, on the order of seconds, with only surface relaxation. In this paper we report the first efforts towards exploiting this unique feature to study these two basic processes independently. Thin epitaxial films of ZnSe were grown using PLD on (001) GaAs and 2° miscut (001) GaAs substrates. For growth on both the singular and vicinal surfaces, RHEED patterns taken following growth showed clear, streaky first zone and sharp second zone spots, and well-defined Kikuchi lines; these features are indicative of a smooth growth surface and high quality film. No reconstruction of the growth surface was observed, in contrast to behavior observed in molecular beam epitaxy. Time-resolved RHEED measurements show that a single morphology developed during growth on singular (001) GaAs. However, during growth on miscut (001) GaAs, two morphologies developed, one transitory and one appearing to evolve towards steady state. When growth on the miscut substrate was stopped, recovery of the RHEED signal was observed. The rate of recovery could be attributed to two relaxation processes, as differentiated by their time constants. Potential origins of these observations are discussed.

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Section: Discussionsupporting

confidence: 72%

“…This behavior is similar to that seen in MBE growth [13] and is fit by an equation that describes the recovery as having contributions from two processes,…”

Section: Results -Growth On Vicinal Surfacessupporting

confidence: 53%

Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs by Pulsed Laser Deposition

McCamy

Aziz

1996

MRS Proc.

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“…This is consistent with the results of the spot profile analysis given before for growth front relaxation after extended growth. The two growth front relaxation processes considered involve the breaking of Ga-As bonds and their re-formation after Ga migration and incorporation at an energetically more favourable site [54]. It is important to note that we have frequently observed a shoulder in the recovery curve immediately after growth interruption, in particular at very low growth rates, which might be explained by the migration and incorporation of Ga adatoms without the necessity for bond breaking.…”

Section: 2mentioning

confidence: 80%

Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy

Däweritz

Ploog

1994

Semicond. Sci. Technol.

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The structure and atomic-scale morphology of GaAs surfaces and the use of reflection high-energy electron diffraction to control their evolution during molecular beam epitaxy are reviewed. Results on the terrace-step structure of the singular (001) surface, on step arrays on vicinal (001) surfaces and on facet arrays on high-index surfaces are presented. Implications for interface formation and modifications by incorporation of impurities are pointed out. New approaches toward a direct synthesis of one-dimensional structures are considered, including the attachment of impurity atoms at edges of miso~rientation steps and GaAs/AiAs multilayer growth on corrugated high-index surfaces.

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“…An important observation made by Yoshinaga et al [59] was that the recovered intensity depends on the specific phase of the oscillation signal at which the growth was terminated. This observation was first interpreted as a smoothing of the surface resulting from the postgrowth rearrangement of atoms.…”

Section: Reflection High-energy Electron Diffractionmentioning

confidence: 98%