Relationships between dopants, microstructure and the microwave dielectric properties of ZrO2-TiO2-SnO2 ceramics

Iddles, D.; Bell, Andrew J.; Moulson, A. J.

doi:10.1007/bf00576276

Cited by 228 publications

(100 citation statements)

References 21 publications

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“…The optimum material is readily seen to have a composition in the vicinity of Zr .2 Sn .2 Ti .6 O 2 . A crystalline composition [24,25] close to Zr .45 Sn 0.1 Ti .45 O 2 is commercially used as a microwave dielectric -it is notable that the optimum amorphous composition is distinctly different and therefore unexpected. One can see that it is extremely .…”

Section: Using High-throughput Techniques To Search For New Inorganicmentioning

confidence: 99%

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Dover

Schneemeyer

2004

Macromol. Rapid Commun.

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Summary: We discuss the high‐throughput materials discovery/exploration paradigm in the context of inorganic materials. We emphasize the codeposited continuous composition spread approach, contrasting it with layered composition spreads and the discrete combinatorial approach to synthesis. The results of specific investigations on dielectrics are discussed in detail. The use of inorganic materials in thin film form entails some general advantages and disadvantages that will be discussed. We also contrast the considerations involved in the screening/discovery of new materials vis‐à‐vis reliable characterization of the composition dependence of properties.Ternary plot of the relative dielectric constant in the ZrSnTiO system.magnified imageTernary plot of the relative dielectric constant in the ZrSnTiO system.

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Section: Using High-throughput Techniques To Search For New Inorganicmentioning

confidence: 99%

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Dover

Schneemeyer

2004

Macromol. Rapid Commun.

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“…antimonium, tantalium, niobium) can increase the quality factor by reducing the oxygen deficiency usually present in this compound. 2 Films of ZTS have been produced by using sol-gel, 3 r.f. magnetron sputtering 4 and pulsed laser ablation 5,6 techniques.…”

Section: Introductionmentioning

confidence: 99%

Study of Zr_1−xSn_xTiO₄ thin films prepared by a polymeric precursor route

Gusmano¹,

Bianco²,

Viticoli³

et al. 2002

Surface & Interface Analysis

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Zirconium-stannate titanate Zr 1−x Sn x TiO 4 (ZTS) thin films, undoped and doped with Sb, Ta and Nb, were prepared by a polymeric precursor technique. The ZTS films were deposited on the multilayered substrates (Pt/Ti/SiO 2 /Si) by means of multiple spin-coating. After this deposition, the samples were heated at different temperatures (300-700• C). The chemical composition of these films and bulk ZTS samples was investigated by using x-ray photoelectron spectroscopy and selected-area XPS depth profiling. A partial surface segregation of Sn IV and the presence of Sn 0 , Ti II and Ti III species in the films were revealed from XPS depth profiles. An optimized ZTS deposition process, where an oxidizing agent (H 2 O 2 ) is added to the gel, is proposed.

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“…18), 19) The intrinsic Q sets the upper limit value for a pure defect-free single crystal and can be quantitatively described by the well-known classical damped oscillator model in the microwave frequency range. In this model, when employing onephonon absorption approximation, a roughly reciprocal relationship between Q©f and ¾ r can be obtained:…”

Section: Resultsmentioning

confidence: 99%

Dielectric properties and crystal structure of (Mg0.95Ni0.05)4(Nb1−xTax)2O9 ceramics

Wang

Lin

et al. 2016

J. Ceram. Soc. Japan

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The microstructure of (Mg 0.95 Ni 0.05 ) 4 (Nb 1¹x Ta x ) 2 O 9 ceramics was analyzed using X-ray diffractometry and scanning electron microscopy. The quality factor (Q©f ) values of (Mg 0.95 Ni 0.05 ) 4 (Nb 1¹x Ta x ) 2 O 9 (x = 1) ceramics increase with increasing sintering temperature, with the maximum value obtained at 1375°C. The maximum values of electric permittivity (¾) and Q©f were 12.76 and 442,000 GHz, respectively, for (Mg 0.95 Ni 0.05 ) 4 (Nb 1¹x Ta x ) 2 O 9 (x = 1) ceramics sintered at 1375°C for 4 h. Furthermore, the temperature coefficient of resonant frequency (¸f ) measured for (Mg 0.95 Ni 0.05 ) 4 (Nb 1¹x Ta x ) 2 O 9 (x = 1) ceramics is ¹54 ppm/°C.

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Relationships between dopants, microstructure and the microwave dielectric properties of ZrO2-TiO2-SnO2 ceramics

Cited by 228 publications

References 21 publications

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Study of Zr_1−xSn_xTiO₄ thin films prepared by a polymeric precursor route

Dielectric properties and crystal structure of (Mg<sub>0.95</sub>Ni<sub>0.05</sub>)<sub>4</sub>(Nb<sub>1−</sub><i><sub>x</sub></i>Ta<i><sub>x</sub></i>)<sub>2</sub>O<sub>9</sub> ceramics

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Relationships between dopants, microstructure and the microwave dielectric properties of ZrO2-TiO2-SnO2 ceramics

Cited by 228 publications

References 21 publications

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

The Codeposited Composition Spread Approach to High‐Throughput Discovery/Exploration of Inorganic Materials

Study of Zr1−xSnxTiO4 thin films prepared by a polymeric precursor route

Dielectric properties and crystal structure of (Mg<sub>0.95</sub>Ni<sub>0.05</sub>)<sub>4</sub>(Nb<sub>1&minus;</sub><i><sub>x</sub></i>Ta<i><sub>x</sub></i>)<sub>2</sub>O<sub>9</sub> ceramics

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Study of Zr_1−xSn_xTiO₄ thin films prepared by a polymeric precursor route

Dielectric properties and crystal structure of (Mg<sub>0.95</sub>Ni<sub>0.05</sub>)<sub>4</sub>(Nb<sub>1−</sub><i><sub>x</sub></i>Ta<i><sub>x</sub></i>)<sub>2</sub>O<sub>9</sub> ceramics