Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film

Zheng

J. Phys. D: Appl. Phys.

et al. 2023

By constructing Eu0.7Sr0.3MnO3 thin films/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (001) multiferroic heterostructures, the electrical transport properties of the Eu0.7Sr0.3MnO3 thin film under electro-photo dual control is studied. At room temperature, as the in-plane reading current increases from 1 μA to 100 μA, the polarization current effect gradually weakens, while the strain effect becomes more evident. As the temperature decreases from 300 K to 240 K, the ferroelectric field effect is observed to strengthen progressively. In addition, by applying light illumination, the ferroelectric field effect observed at 240 K can be suppressed, which proves that the light field can obviously control the tunable mechanism of electric field. Our results demonstrate that the temperature and light field play an important role in the switching between the electric field induced multiple tunable effects, such as polarization current effect, lattice strain effect and ferroelectric field effect. Meanwhile, the sensitivity of the Eu0.7Sr0.3MnO3 film to lattice strain enhances its application in tunable electronics.

Section: Resultssupporting

confidence: 70%

Polarization current effect, strain effect and ferroelectric field effect on electrical transport properties of Eu_0.7Sr_0.3MnO₃/PMN-PT multiferroic heterostructure

Zheng

J. Phys. D: Appl. Phys.

et al. 2023

“…Very recently, Wang et al reported voltage-driven and V O doping-controlled Mott transition in atomic-layer-deposited La 2 Ti 2 O 7−x (LTO) film on TiN substrate [ 142 ]. The mixed valence states of Ti ion (Ti 4+ and Ti 3+ ) and the composition of La versus Ti (1.07) in the pristine LTO film were confirmed by X-ray photoelectron spectroscopy.…”

Section: Recent Studies On Filament-free Switching Memristorsmentioning

confidence: 99%

Filament-free memristors for computing

Choi,

Moon,

Wang

et al. 2023

Nano Convergence

Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal–oxide–semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.

“…In most studies, X-ray photoelectron spectroscopy (XPS) has been used to analyse the N species in LTO and examine the electronic states. 9,15,16,21 However, there is an issue with the inconsistent peak assignments of N-doped LTO in the N 1s XPS spectra. Most reports attribute the peak at approximately 399 eV to the Ti-O-N bond, 19,[22][23][24][25][26][27] whereas some attribute it to the Ti-N bond.…”

Section: Introductionmentioning

confidence: 99%

Unlocking the chemical environment of nitrogen in perovskite-type oxides

Shimizu,

Yoshii,

Nishikawa

et al. 2024

Chem. Sci.