Polarization current effect, strain effect and ferroelectric field effect on electrical transport properties of Eu_0.7Sr_0.3MnO₃/PMN-PT multiferroic heterostructure

Abstract

By constructing Eu0.7Sr0.3MnO3 thin films/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (001) multiferroic heterostructures, the electrical transport properties of the Eu0.7Sr0.3MnO3 thin film under electro-photo dual control is studied. At room temperature, as the in-plane reading current increases from 1 μA to 100 μA, the polarization current effect gradually weakens, while the strain effect becomes more evident. As the temperature decreases from 300 K to 240 K, the ferroelectric field effect is observed to strengthen progressively. In addition, by applying light illumination, the ferroelectric field effect observed at 240 K can be suppressed, which proves that the light field can obviously control the tunable mechanism of electric field. Our results demonstrate that the temperature and light field play an important role in the switching between the electric field induced multiple tunable effects, such as polarization current effect, lattice strain effect and ferroelectric field effect. Meanwhile, the sensitivity of the Eu0.7Sr0.3MnO3 film to lattice strain enhances its application in tunable electronics.