Printed electronics has emerged as a pathway for large scale, flexible, and wearable devices enabled by graphene and two-dimensional (2D) materials. Solution processing of graphite and layered materials demonstrated mass production of inks allowing techniques such as inkjet printing to be used for device fabrication. However, the complexity of the ink formulations and the polycrystalline nature of the thin films, together with the metal, semimetal, and semiconducting behaviour of different 2D materials, have impeded the investigation of charge transport in inkjet printed 2D material devices. Here we unveil the charge transport mechanisms of surfactant-and solvent-free inkjet-printed thin-film devices of representative few-layer graphene (semi-metal), molybdenum disulfide (MoS2, semiconductor) and titanium carbide MXene (Ti3C2, metal) by investigating the temperature (T ), gate and magnetic field dependencies of their electrical conductivity. We find that charge transport in printed few-layer MXene and MoS2 devices is dominated by the intrinsic transport mechanism of the constituent flakes: MXene devices exhibit a weakly-localized 2D metallic behavior at any T , whereas MoS2 devices behave as insulators with a crossover from 3D-Mott variable-range hopping at low T to nearest-neighbor hopping around at ∼ 200 K. The charge transport in printed few-layer graphene devices is dominated by the transport mechanism between different flakes, which exhibit 3D-Mott variable range hopping conduction at any T . These findings reveal and finally establish the fundamental mechanisms responsible for charge transport in inkjet-printed devices with 2D materials, paving the way for a reliable design of high performance printed electronics.