Refractive indices of wurtzite and zincblende GaN

Lin, Min; Sverdlov, B.; Strite, S.; Morkoç̌, H.; Drakin, A E

doi:10.1049/el:19931172

Cited by 78 publications

(30 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 over the wavelength range of 394−600 nm. 15 The calculated refractive indices of GaN are similar to the experimental ones, as shown in Fig. 4, even though little discrepancy exhibits in the two results.…”

Section: Refractive Indicessupporting

confidence: 81%

Investigation of material properties for zincblende AlGaN alloys applied in UV LEDs

Liou

Liu²,

Kuo

2007

SPIE Proceedings

View full text Add to dashboard Cite

The material properties of zincblende Al x Ga 1-x N alloys from first-principles calculations are investigated. It is found that the bulk moduli of zincblende Al x Ga 1-x N increase with an increase of aluminum composition x, but the pressure derivative of bulk modulus decreases with an increase of aluminum composition x. The bulk modulus of 199.82 ± 0.64 GPa for GaN increases to that of 213.03 ± 1.09 GPa for AlN, and the deviation parameter of bulk modulus for zincblende Al x Ga 1-x N is 11.18 ± 3.61 GPa. The pressure derivative of bulk modulus of 4.190 ± 0.020 for GaN decreases to that of 3.589 ± 0.030 for AlN. The refractive indices in the wavelength range of 300−600 nm are also investigated. The one-Sellmeier-term expression is used for curve-fitting analysis of the refractive index as a function of the wavelength in the transparent region, and the results should provide for the design and growth of vertical cavity structures and distributed Bragg reflectors on GaAs substrates. Finally, the direct bowing parameter of 0.446 ± 0.126 eV and indirect bowing parameter of −0.360 ± 0.242 eV are obtained. There is a direct-indirect crossover near x = 0.654 for which the band gap energy is 4.573 eV.

show abstract

Section: Refractive Indicessupporting

confidence: 81%

Investigation of material properties for zincblende AlGaN alloys applied in UV LEDs

Liou

Liu²,

Kuo

2007

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Spectroscopic transmittance and reflectance ͑STR͒ have been used to measure the ordinary refractive index of Al x Ga 1Ϫx N films. [1][2][3] Spectroscopic ellipsometry ͑SE͒ has been used to measure the refractive index and extinction coefficients of Al x Ga 1Ϫx N films 4 -6 and to measure both ordinary and extraordinary refractive indices of GaN films. 7 The STR and SE methods, when performed with white-light illumination, have the advantage that the optical properties can be measured as a quasicontinuous function of wavelength throughout a large wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Refractive index study of AlxGa1−xN films grown on sapphire substrates

Sanford

Robins

Davydov

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inDispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range A prism coupling method was used to measure the ordinary (n o ) and extraordinary (n e ) refractive indices of Al x Ga 1Ϫx N films, grown by hydride vapor phase epitaxy ͑HVPE͒ and metalorganic chemical vapor deposition ͑MOCVD͒ on sapphire, at several discrete wavelengths from 442 nm to 1064 nm. In addition, spectroscopic transmittance and reflectance, correlated with the prism coupling results, were used to measure n o as a continuous function of wavelength between the band gap of each sample ͑255 nm to 364 nm, depending on Al fraction͒ and 2500 nm. The Al mole fractions ͑x͒, determined by energy dispersive x-ray spectroscopy ͑EDS͒, were xϭ0.144, 0.234, 0.279, 0.363, 0.593, and 0.657 for the HVPE-grown samples, and xϭ0.000, 0.419, 0.507, 0.618, 0.660, and 0.666 for the MOCVD-grown samples. The maximum standard uncertainty in the EDS-determined value of x was Ϯ0.02. The maximum standard uncertainty in the refractive indices measured by prism coupling was Ϯ0.005 and a one-Sellmeier-term equation was adequate to fit the wavelength dependence of n e from 442 nm to 1064 nm. Due to the spectral proximity of the absorption edge, the wavelength dependence of n o measured by spectroscopic transmittance/ reflectance ͑correlated with the prism-coupling results͒, from the band gap of each sample to 2500 nm, was fit with a two-Sellmeier-term equation.

show abstract

“…15,16 While material quality may account for the lower-energy luminescence behavior, it is less likely that it is related to the surface emission behavior of the X A and D 0 X. A possible explanation for the observed surface luminescence may be optical reabsorption; band-edge transitions may only be detected near the surface because high-energy photons emitted in the bulk are absorbed before they leave the sample.…”

mentioning

confidence: 99%