Refractive index changes of ion-implanted quartz

Abstract

BYIon implantation into crystalline quartz and fused silica results in radiation damage associated with remarkable refractive index modifications /1 to 3/. Defect formation and the changes of the SO4-tetrahedra ring structure are mainly caused by nuclear processes /2 to 4/. Energy deposition by electronic processes influences also the structure of the Si02 network in fused silica /4/ as well as in predamaged quartz /5/, but in each case with a very small efficiency.

Solid phase epitaxial regrowth of ion beam-amorphized α-quartz

“…[3][4][5][6][7][8][9][10][11] In order to control the optical and electrical properties of ␣-quartz by ion implantation, a good knowledge of the thermal stability of the radiation-induced defects and the disordered phase is required, and effective procedures for defect recovery and recrystallization need to be developed. [3][4][5][6][7][8][9][10][11] In order to control the optical and electrical properties of ␣-quartz by ion implantation, a good knowledge of the thermal stability of the radiation-induced defects and the disordered phase is required, and effective procedures for defect recovery and recrystallization need to be developed.…”