Refraction Index Measurements on AlN Single Crystals

Pastrňák, J.; Roskovcová, L.

doi:10.1002/pssb.19660140127

Cited by 148 publications

(40 citation statements)

References 7 publications

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“…Indirect transitions for AlN are predicted also by Wang et al [6] with the indirect edge at 4.3 eV. Their existence seems to be confirmed by the spectral dependence of the index of refraction in the region of strong absorption [7].…”

Section: Introductionsupporting

confidence: 53%

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Optical Absorption Edge of AIN Single Crystals

Pastrňák

Roskovcová

1968

Physica Status Solidi (b)

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Section: Introductionsupporting

confidence: 53%

“…Plate-like crystals with the c-axis perpendicular to the crystal plane, prisms parallel to the c-axis as well as crystal twins of the deltoid shape [7] with the c-axis in the crystal plane were used for measurements. I n the last case only one half of the crystal was used.…”

Section: Methodsmentioning

confidence: 99%

Optical Absorption Edge of AIN Single Crystals

Pastrňák

Roskovcová

1968

Physica Status Solidi (b)

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“…A higher reflection coefficient of the incident laser light at the top facet can also be excluded as an origin for the intensity drop: assuming a refractive index of n = 2.34 at λ = 266 nm (for AlN), 12 this results in a reflectivity at the top facet of only 16%…”

Section: Resultsmentioning

confidence: 99%

Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

et al. 2017

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The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al,Ga)N shell with a larger band gap around the GaN nanowire core is a promising geometry to seal the GaN surface. We investigate the luminescence and structural properties of selective area-grown GaN-(Al,Ga)N core-shell nanowires grown on Si and diamond substrates. While the (Al,Ga)N shell allows a suppression of yellow defect luminescence from the GaN core, an overall intensity loss due to Si-related defects at the GaN/(Al,Ga)N interface has been observed in the case of Si substrates. Scanning transmission electron microscopy measurements indicate a superior crystal quality of the (Al,Ga)N shell along the nanowire side facets compared to the (Al,Ga)N cap at the top facet. A nucleation study of the (Al,Ga)N shell reveals a pronounced bowing of the nanowires along the c-direction after a short deposition time which disappears for longer growth times. This is assigned to an initially inhomogeneous shell nucleation. A detailed study of the proceeding shell growth allows the formulation of a strain-driven self-regulating (Al,Ga)N shell nucleation model.

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“…Для полупроводникового материала формально учиты-вается хроматическая дисперсия с помощью коэффици-ентов Селлмайера [8].…”

Section: генерация второй гармоники в бесконечном одномерном фотонномunclassified

Фотонно-Кристаллический Волновод Для Генерации Второй Гармоники

Савченко¹,

Дюделев²,

Лундин³

et al. 2017

Физика Твердого Тела

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Теоретически показана возможность эффективной генерации второй гармоники в оптическом диапазоне длин волн в плоском диэлектрическом волноводе с активной областью, представляющей собой одномерный фотонный кристалл. Истинный синхронизм фаз достигается за счет управления дисперсией волн в фотонном кристалле. Проведено самосогласованное решение дисперсионных уравнений фотонного кристалла и трехслойного волновода. Показано, что длина когерентности может превышать 10 mm. Работа выполнена при частичной финансовой поддержке РФФИ (грант N 17-02-00865). DOI: 10.21883/FTT.2017.09.44836.072

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Refraction Index Measurements on AlN Single Crystals

Cited by 148 publications

References 7 publications

Optical Absorption Edge of AIN Single Crystals

Optical Absorption Edge of AIN Single Crystals

Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

Фотонно-Кристаллический Волновод Для Генерации Второй Гармоники

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