Optical Absorption Edge of AIN Single Crystals

Pastrňák, J.; Roskovcová, L.

doi:10.1002/pssb.19680260223

Cited by 83 publications

(20 citation statements)

References 27 publications

(7 reference statements)

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“…In literature, the 4.2 eV peak is commonly [3,17] designated as "oxygen related". Following Slack et al [3], the oxygen content can be estimated by both position and absorption coefficient of the peak maximum.…”

Section: Resultsmentioning

confidence: 99%

PVT growth of bulk AlN crystals with low oxygen contamination

Bickermann

Epelbaum

Winnacker

2003

phys. stat. sol. (c)

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Section: Resultsmentioning

confidence: 99%

PVT growth of bulk AlN crystals with low oxygen contamination

Bickermann

Epelbaum

Winnacker

2003

phys. stat. sol. (c)

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“…Below the onset of fundamental absorption at energies higher than 5.8 eV (see also Ref. [8,[28][29][30][31]), homogeneously broadened absorption bands were observed. A band at around 2.8 eV was detected in all of our samples.…”

Section: Optical Absorptionmentioning

confidence: 95%

Characterization of bulk AlN with low oxygen content

Bickermann

Epelbaum

Winnacker

2004

Journal of Crystal Growth

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“…The investigated Al x Ga 1-x N layers with 0 < x < 1 were grown with plasma-assisted MBE on (0001) sapphire and are about 1 µm thick [14,15]. The AlN samples were fabricated by a direct reaction of aluminum vapor with nitrogen at high temperatures (1900 °C) [16,17]. These whiskers are some 10 µm thick and up to 1 cm long.…”

Section: Experimental 21 Samplesmentioning

confidence: 99%

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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We present a selection of our contributions to basic research on the lattice dynamical properties of group-III nitrides and their alloys. We used first-order Raman scattering to determine the zone-center phonons and their dependence on structural attributes such as stress, chemical composition, impurities, and doping. Results on the angular dispersion of the polar modes, strain distribution, coupled LO-phonon plasmon modes, multi-mode behavior in Al x Ga 1-x N, and the quantitative determination of the phase purity of cubic and hexagonal GaN are shown. Second-order Raman-scattering experiments on GaN and AlN provide information on the vibrational states throughout the entire Brillouin zone. Based on a comparison of experimental data and calculated phonon-dispersion curves we assigned the observed structures to particular phonon branches and points in the Brillouin zone. We also discuss the behavior of the optical modes under large hydrostatic pressure. 1 Introduction During the last decade group-III nitrides have been an object of increasing research because of their interesting physical properties such as an adjustable band gap (1.9 eV to 6.2 eV) by varying the composition of the alloys [1] and application as basic materials for optoelectronic devices working in the blue and ultraviolet spectral region [2][3][4]. In particular GaN and AlN can withstand high temperatures and have large piezoelectric constants which makes them suitable for applications in highfrequency devices, sensors and low-dimensional structures [5,6].Although basic information about group-III nitrides e.g. crystal-and band structure have been available for a decade several details still remained unclear. In the following review of our work we present results of first-and second-order Raman investigations on various GaN, AlN, and Al x Ga 1-x N samples and point out some remarkable details of the structural and optical properties of these materials.

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Optical Absorption Edge of AIN Single Crystals

Cited by 83 publications

References 27 publications

PVT growth of bulk AlN crystals with low oxygen contamination

PVT growth of bulk AlN crystals with low oxygen contamination

Characterization of bulk AlN with low oxygen content

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

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