Reflection from the Side Face of a PbSb2Te4 Crystal

Немов, С. А.; Ulashkevich, Yu. V.; Pogumirsky, M. V.; Stepanova, O. S.

doi:10.1134/s1063782620030161

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case when both tensors of the effective mass m ik and relaxation time τ ik are diagonal in the same coordinate axes, the relaxation time will have two independent components-the longitudinal τ l and τ t. The relaxation time anisotropy will be characterized by the coefficient Recent research of the anisotropy of PbSb 2 Te 4 crystal reflection spectra, doped by Cu (Nemov et al 2020) in the plasma reflection area, allows us to estimate the relaxation time anisotropy. The fact is that the experimental IR reflection spectra are well described in the framework of Drude-Lorentz model (Nemov et al 2016;2020) with the help of the dielectric function containing the parameter attenuation (damping) of the plasma oscillations γ, which is equal to γ = 1/τ.…”

Section: Evaluation Of Effective Mass Anisotropy and Relaxation Time Of Holesmentioning

confidence: 99%

See 1 more Smart Citation

The valence zone structure in PbSb2Te4 and anisotropy of hole relaxation time

Nemov

Андреева

Volkhin

et al. 2021

Physics of Complex Systems

View full text Add to dashboard Cite

The article analyses the existing set of data on the temperature dependences of the main kinetic coefficients and the IR-reflection spectra R(ν) of the PbSb 2 Te 4 crystals. The form of the Fermi surface is discussed. The anisotropy of holes' effective mass and relaxation time is estimated. The complex structure of the valence zone is confirmed, the values of these parameters are refined. Complex X-ray studies of the structure and composition of PbSb 2 Te 4 samples gave the possibilities to clarify the real crystal structure and explain the number of features in the IR-reflection spectra.

show abstract

Section: Evaluation Of Effective Mass Anisotropy and Relaxation Time Of Holesmentioning

confidence: 99%

“…PbSb 2 Te 4 optical properties were not studied well. Only reflection spectra were measured (Nemov et al 2016) and their anisotropy (Nemov et al 2020).…”

Section: Introductionmentioning

confidence: 99%

The valence zone structure in PbSb2Te4 and anisotropy of hole relaxation time

Nemov

Андреева

Volkhin

et al. 2021

Physics of Complex Systems

View full text Add to dashboard Cite

show abstract

Mathematical Modelling of the Electric Field in Anisotropic Semiconductors during Hall Measurements

Filippov,

Zavorotniy

2023

Tech. Phys.

View full text Add to dashboard Cite

The Study of the Electrical Properties of Anisotropic Semiconductors in the Laboratory Workshop of the University Course in Physics

Filippov,

Zavorotny,

Smirnov

et al. 2023

jour

View full text Add to dashboard Cite

The purpose of the article is to develop a theoretically and experimentally substantiated specific laboratory work for studying the anisotropy of the electrical properties of semiconductors within the framework of the curricula of higher educational institutions, for such areas of training as “Physics”, “Technical Physics”, “Radiophysics” and “Electronics and Nanoelectronics”. The relevance of the problem is due to the desire of domestic electronics for technological sovereignty and high requirements for the training of qualified personnel for the production of structures of solid-state functional electronics. Based on the solution of the boundary electrodynamic problem, an expression is obtained for the electric potential in the region of a thin rectangular semiconductor sample with a tensor character of conductivity. The results of this work is the development of an original laboratory setup for the demonstration and practical study of the anisotropy of the electrical properties of semiconductor crystals. The proposed technique makes it possible to determine the main electrokinetic parameters of an anisotropic semiconductor – specific conductivity, concentration and Hall mobility of the main charge carriers. A schematic diagram of the installation and formulas for calculating the errors of the measured quantities are proposed. The results obtained may also be of scientific interest in the study of anisotropic semiconductor materials in laboratory conditions.

show abstract

Reflection from the Side Face of a PbSb2Te4 Crystal

Cited by 3 publications

References 9 publications

The valence zone structure in PbSb2Te4 and anisotropy of hole relaxation time

The valence zone structure in PbSb2Te4 and anisotropy of hole relaxation time

Mathematical Modelling of the Electric Field in Anisotropic Semiconductors during Hall Measurements

The Study of the Electrical Properties of Anisotropic Semiconductors in the Laboratory Workshop of the University Course in Physics

Contact Info

Product

Resources

About