Reflection by defects in a tight-binding model of nanotubes

Kostyrko, T.; Bartkowiak, M.; Mahan, G. D.

doi:10.1103/physrevb.59.3241

Cited by 92 publications

(64 citation statements)

References 26 publications

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“…1) In fact, the resistance has been shown to be nonzero for CN's with lattice vacancies, [15][16][17] a Stone-Wales defect, 18,19) junctions with topological defects, [20][21][22][23] interstitial atoms, 24) and model short-range scatterers. [25][26][27] Effects of such shortrange scatterers are expected to depend strongly on the number of bands at the Fermi level as in the case of weak magnetic field or flux studied previously. 28) In understanding transport properties of nanotubes, a kÁp method or an effective-mass approximation 29) is known to be quite powerful.…”

Section: Introductionmentioning

confidence: 80%

Effects of Short-Range Scatterers on Perfect Channel in Metallic Carbon Nanotubes

Ando

Akimoto

2004

J. Phys. Soc. Jpn.

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Numerical calculations of the conductance are performed to study effects of short-range scatterers on a perfectly conducting channel in metallic carbon nanotubes existing unless the potential range of scatterers is smaller than the lattice constant. The perfect channel can easily be destroyed in the presence of small amount of short-range scatterers when there are several bands at the energy, while it is much more robust in the energy range of metallic linear bands.

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Section: Introductionmentioning

confidence: 80%

Effects of Short-Range Scatterers on Perfect Channel in Metallic Carbon Nanotubes

Ando

Akimoto

2004

J. Phys. Soc. Jpn.

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“…In fact, the scattering of electrons by vacancies was studied in carbon nanotubes both in a tight-binding model and in an effective-mass approximation and was shown to depend critically on the difference in the number of vacancies at A and B sublattices when the strength of the potential is sufficiently large. [15][16][17][18][19][20][21] In nanotubes, resonance scattering by defects was experimentally observed [22][23][24] and various theoretical calculations based on first-principles [25][26][27][28] and tight-binding models 29,30) were reported.…”

Section: Introductionmentioning

confidence: 99%

Theory of Electron Scattering by Lattice Defects in Monolayer Graphene

Toyoda

Ando

2010

J. Phys. Soc. Jpn.

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Electron scattering by defects consisting of several strong and short-range impurities at A and B sublattice points lying close to each other is studied within a kÁp scheme in monolayer graphene. In a defect consisting of a single impurity, a quasi-bound state like donor or acceptor state emerges near the Dirac point when the potential becomes extremely strong. In the case of AB pair impurities, the quasi-bound state splits into two and the resonance appears near the Dirac point for small scattering potential. In the case of defects consisting of many atoms, the number of resonances is given by that of AB pairs.

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“…On the other hand, metallic nanotubes reportedly have electrical resistances which are not sensitive to the gate voltage or homogeneous transverse electric fields [6,7,8,9] and this insensitivity has discouraged device applications of the metallic ones. The previous reports on metallic nanotubes, however, are limited to clean ones with electric fields [8,9,10,11,12] or to defective ones without electric fields [13,14,15,16] even though impurities or structural defects under the transverse electric field may produce exotic effects because of the low dimensionality of the nanotubes.A clean armchair-type SWNT is metallic with two linear bands intersecting at the Fermi energy (E F ) regardless of its diameter [17] (Fig. 1(a)).…”

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confidence: 99%

Electrical Switching in Metallic Carbon Nanotubes

et al. 2005

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We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than two orders of magnitude with experimentally attainable electric fields. This novel property has its origin that backscattering of conduction electrons by impurities or defects in the nanotubes is strongly dependent on the strength and/or direction of the applied electric fields. We expect this property to open a path to new device applications of metallic carbon nanotubes.PACS numbers: 72.80. Rj, 73.63.Fg, 81.05.Tp Are single-walled carbon nanotubes (SWNTs) suitable for future nano-electronic device applications? The answer depends on whether the electrical properties of carbon nanotubes are changeable by applied gate voltages or electric fields [1]. Carbon nanotubes are either semiconducting or metallic, depending on their atomic geometry (diameter and chirality). Semiconducting carbon nanotubes are well suited for nano-electronic device applications [2,3,4,5] because their electrical resistance is controllable by the gate voltage just as in silicon-based field-effect transistors. On the other hand, metallic nanotubes reportedly have electrical resistances which are not sensitive to the gate voltage or homogeneous transverse electric fields [6,7,8,9] and this insensitivity has discouraged device applications of the metallic ones. The previous reports on metallic nanotubes, however, are limited to clean ones with electric fields [8,9,10,11,12] or to defective ones without electric fields [13,14,15,16] even though impurities or structural defects under the transverse electric field may produce exotic effects because of the low dimensionality of the nanotubes.A clean armchair-type SWNT is metallic with two linear bands intersecting at the Fermi energy (E F ) regardless of its diameter [17] (Fig. 1(a)). The tube's electrical resistance is determined by its electronic structure. A clean metallic SWNT should have an electrical resistance of 6.5 kΩ in two-probe measurements with perfect electrical contacts [17,18]. This results from the resistance quantum, 12.9 kΩ [19,20] (which is h/2e 2 with h = Planck's constant and e = charge of an electron) divided by the number of bands at E F . The resistance of a clean metallic carbon nanotube is insensitive to a homogeneous transverse (i.e., perpendicular to the tubular axis) electric field. Although the applied electric field polarizes the nanotube along the field direction [21] and the band dispersion is modified near E F (Fermi velocities are slightly decreased as shown in Fig. 1(b)), electric fields of moderate strength do not change the number of bands at E F [8, 9, 10, 11] which is the only material parameter that determines the resistance of a clean one dimensional sample. Contrary to the clean tube case, however, a defective metallic carbon nanotube, as will be show...

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Reflection by defects in a tight-binding model of nanotubes

Cited by 92 publications

References 26 publications

Effects of Short-Range Scatterers on Perfect Channel in Metallic Carbon Nanotubes

Effects of Short-Range Scatterers on Perfect Channel in Metallic Carbon Nanotubes

Theory of Electron Scattering by Lattice Defects in Monolayer Graphene

Electrical Switching in Metallic Carbon Nanotubes

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