“…APTES films on silicon substrates have been characterized by numerous analytical techniques including X-ray photoelectron spectroscopy (XPS) [17,18,[27][28][29][30], Fourier transform infrared spectroscopy (FTIR) [31][32][33][34][35][36][37][38][39], ellipsometry [17,22,40], scanning probe microscopy [8,17,28,29], and contact angle measurements [18,30,41,42]. In particular, Fourier transform infrared spectroscopy with various sampling techniques has been popularly used to extract structural information regarding organic films of various thicknesses on silicon wafers.…”