“…SR is also important for estimating the PV device's performance under various conditions from that under standard test conditions (STC, namely, irradiance of 1 kW=m 2 , spectrum of AM1.5G, and device temperature of 25 °C), 18) and vice versa. It is known that the long-wavelength tail of the SR of various PV devices such as c-Si, 4,19,20) III-V compound semiconductors, [21][22][23] and amorphous silicon and CIS 24) shifts toward longer wavelengths as the device temperature increases, which should be taken into account to discuss the TC. 24,25) However, the detailed temperature dependences of the I sc and SR of various c-Si PV devices have not been systematically investigated thus far.…”