Reduction of thermal conductivity in dually doped ZnO by design of three-dimensional stacking faults

Takemoto, H.; Fugane, Keisuke; Yan, Pengfei; Drennan, John; Saito, Miwa; Mori, Toshiyuki; Yamamura, Hiroshi

doi:10.1039/c3ra44223c

Cited by 22 publications

(34 citation statements)

References 37 publications

(56 reference statements)

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“…STEM‐EDS shows Mn–Al intermixing at the b‐IDB and previous studies observed In–Ga co‐occupation of p‐IBDs . Co‐occupancy of IDBs creates disorder, further reducing κ .…”

Section: Resultssupporting

confidence: 54%

“…ZnO‐based materials are receiving increasing attention for use as magnetic semiconductors, thermoelectrics and transparent conducting oxides . ZnO nanomaterials are an area of intense research due to the new functionalities induced by nanoscale features.…”

Section: Introductionmentioning

confidence: 99%

“…Experimental and theoretical studies have investigated the effects of IDBs on the properties of ZnO. The influence of IDBs on the thermoelectric and optoelectronic properties of In‐doped ZnO, which forms RM O 3 (ZnO) n homologous phases (where R and M are the dopants occupying the b‐IDB and p‐IDB respectively), has been investigated systematically, with optimal properties achieved for specific n values .…”

Section: Introductionmentioning

confidence: 99%

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Inversion domain boundaries in Mn and Al dual‐doped ZnO: Atomic structure and electronic properties

et al. 2017

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The atomic and electronic structures of inversion domain boundaries in Mn‐Al dual‐doped ZnO (Zn0.89Mn0.1Al0.01O) have been investigated. Using atomic‐resolution scanning transmission electron microscopy, a head‐to‐head c‐axis configuration and cation stacking sequence of αβαβ|γ|αβαβ along the c‐axis were observed at the basal‐plane inversion domain boundary. Energy‐dispersive X‐ray spectroscopy and electron energy‐loss spectroscopy revealed significant localization of Mn and minor localization of Al at the basal‐plane inversion domain boundary. Based on experimental findings, a Mn‐doped basal‐plane inversion domain boundary slab model was constructed and refined by first principles calculations. The model is in agreement with atomic‐resolution images. The local electronic density of states of the slab model basal‐plane inversion domain boundary shows a hybridization of the Mn d and O p states within the valence band and localized Mn d states in the conduction band. The thermoelectric properties of Zn0.99−xMnxAl0.01O ceramics have been reported in a previous work. In this work, the effects of inversion domain boundaries on the thermoelectric properties are discussed. In comparison to Zn0.99−xMnxAl0.01O ceramics with x≤0.05, inversion domain boundaries in Zn0.89Mn0.1Al0.01O caused thermal and electrical conductivity reduction due to interface scattering of phonons and electrons. The Seebeck coefficient increased, suggesting electron filtering at inversion domain boundaries.

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“…STEM‐EDS shows Mn–Al intermixing at the b‐IDB and previous studies observed In–Ga co‐occupation of p‐IBDs . Co‐occupancy of IDBs creates disorder, further reducing κ .…”

Section: Resultssupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Inversion domain boundaries in Mn and Al dual‐doped ZnO: Atomic structure and electronic properties

et al. 2017

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“…In contrast, ultrasound has been established as accomplished and environmentally friendly technique for synthesis of novel material at low temperature [18] and short time [19]. The effect of ultrasound in enhancing the kinetic of chemical reactions is pointed to the creation of highly reactive free radicals such as O • , OH • , HO 2 • due to the temporary cavitation bubble collapse determined by the ultrasound wave [20]. Ultrasound migrates through the liquid medium in the form of a longitudinal wave comprising of vary compression and rarefaction cycles, as a result of which the local pressure alternates [21].…”

Section: Introductionmentioning

confidence: 95%

“…ZnO is one of the most important useful metal oxide with band gap of 3.37 eV, excitation binding energy of 60 meV, and n-type conductivity owning wide applications in many fields [1]. In general, zinc oxide exists in two main crystalline phase of hexagonal Wurtzite, and cubic Zincblende [2]. The Wurtzite formation is most regular at ambient conditions [3].…”

Section: Introductionmentioning

confidence: 99%

In-situ sonosynthesis of nano N-doped ZnO on wool producing fabric with photo and bio activities, cell viability and enhanced mechanical properties

Behzadnia

Montazer

Rad

2015

Journal of Photochemistry and Photobiology B: Biology

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Inorganic thermoelectric materials: A review

et al. 2020

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Summary Thermoelectric generator, which converts heat into electrical energy, has great potential to power portable devices. Nevertheless, the efficiency of a thermoelectric generator suffers due to inefficient thermoelectric material performance. In the last two decades, the performance of inorganic thermoelectric materials has been significantly advanced through rigorous efforts and novel techniques. In this review, major issues and recent advancements that are associated with the efficiency of inorganic thermoelectric materials are encapsulated. In addition, miscellaneous optimization strategies, such as band engineering, energy filtering, modulation doping, and low dimensional materials to improve the performance of inorganic thermoelectric materials are reported. The methodological reviews and analyses showed that all these techniques have significantly enhanced the Seebeck coefficient, electrical conductivity, and reduced the thermal conductivity, consequently, improved ZT value to 2.42, 2.6, and 1.85 for near‐room, medium, and high temperature inorganic thermoelectric material, respectively. Moreover, this review also focuses on the performance of silicon nanowires and their common fabrication techniques, which have the potential for thermoelectric power generation. Finally, the key outcomes along with future directions from this review are discussed at the end of this article.

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Reduction of thermal conductivity in dually doped ZnO by design of three-dimensional stacking faults

Cited by 22 publications

References 37 publications

Inversion domain boundaries in Mn and Al dual‐doped ZnO: Atomic structure and electronic properties

Inversion domain boundaries in Mn and Al dual‐doped ZnO: Atomic structure and electronic properties

In-situ sonosynthesis of nano N-doped ZnO on wool producing fabric with photo and bio activities, cell viability and enhanced mechanical properties

Inorganic thermoelectric materials: A review

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