Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

Abstract

Articles you may be interested inAtomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles

An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

“…A possible reason for this is that oxidizing ion penetration length into the n + a-Si:H layer at a low (0.22 W/cm 2 ) RF power density becomes very short and the oxide layer's growth rate saturates immediately. 12 Therefore, even if we extend the treatment time, no oxide layer thicker than 1 nm forms and surface oxidation uniformity improves. We assume that this ultrathin and uniform oxide layer formed at a low (0.22 W/cm 2 ) RF power density and a 240-second treatment time successfully provides the same electrical properties as those of conventional Mo electrodes.…”

“…We chose radio frequency (RF) power density and treatment time as parameters for varying the oxidation intensity. 12 This is because the growth kinetics of plasma oxidation at near room temperature, unlike those of thermal oxidation, 13 are dominated by energetic oxidizing ion penetration into an n + a-Si:H layer. 12 In the oxidation treatment we employed, RF power density was varied from 0.22 to 1.1 W/cm 2 and treatment time ranged from 60 to 240 seconds.…”

Optical transmission and laser structuring of silicon membranes

“…Figure 1(a) shows the geometry of the used samples and an actual optical image of an oxidized membrane. The growth rate of the oxide layers was governed by oxygen diffusion and followed the established linear-parabolic relation with time according to the Deal-Grove model [14,15]. As such, the growth rate was weakly dependent on the crystalline orientation.…”

“…Hence a thin few-hundreds-of-nanometers silicon film of a high refractive index n Si 3.4 Si strongly modulates the transmission, reflection, and absorption spectra due to interference. In addition, thermal oxidation of the membranes allows tuning the thickness of silicon via formation of an oxide layer [14,15]. Therefore, thermal oxidation can be used for enhancing or decreasing transmission at the particular wavelength of interest.…”

Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors

“…Since the damaged layer oxidizes due to an air exposure after the plasma etch, the portion is stripped off by the wet-etch. Then, the etched layer results in Si loss whose structure is observed as recessed Si surface, called "Si recess" (Ohchi et al, 2008;Petit-Etienne et al, 2010;Vitale & Smith, 2003). Si recess is formed in the source / drain extension (SDE) region in a MOSFET.…”