Molecular Dynamics - Studies of Synthetic and Biological Macromolecules 2012
DOI: 10.5772/36394
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Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors

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Cited by 1 publication
(2 citation statements)
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“…The interaction of argon ions with oxygen-containing low- k films is intensively studied in the field of modern nanoelectronics where the sputtering process is simulated through the use of molecular dynamics methods. In most cases a repulsive Moliere potential function is used for the two-body interaction term occurring in Newton’s equations of motion . Use of such an approximate potential can only provide a very approximate description for the scattering process.…”
Section: Introductionmentioning
confidence: 99%
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“…The interaction of argon ions with oxygen-containing low- k films is intensively studied in the field of modern nanoelectronics where the sputtering process is simulated through the use of molecular dynamics methods. In most cases a repulsive Moliere potential function is used for the two-body interaction term occurring in Newton’s equations of motion . Use of such an approximate potential can only provide a very approximate description for the scattering process.…”
Section: Introductionmentioning
confidence: 99%
“…In most cases a repulsive Moliere potential function is used for the two-body interaction term occurring in Newton's equations of motion. 9 Use of such an approximate potential can only provide a very approximate description for the scattering process. The accurate Ar + −O interatomic potential we compute in this paper can be used as an improved approximation for the Ar + ion−bonded oxygen potential in such molecular dynamics calculations.…”
Section: Introductionmentioning
confidence: 99%