Reduction of Short Channel Effects and Hot Carrier Induced Instability in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs

Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

“…6) In particular, dual-gate InGaZnO TFTs are promising for the mass production of active-matrix organic light-emitting diode (AMOLED) displays and integrated circuits on panels. [7][8][9][10][11][12] This is because, compared with conventional single-gate (SG) InGaZnO TFTs, DG InGaZnO TFTs have merits of increased driving ability, decreased leakage current, and improved reliability for both negative biasing stressing (NBS) and positive biasing stressing (PBS). [13][14][15][16] There are some research studies on the measurement results of fabricated device and circuit samples with DG InGaZnO TFTs.…”

Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors

“…both n-and ptype devices) with reduced stand-by power and small component count in comparison to unipolar logic [12][13][14][15][16][17] which is used out of necessity in many emerging technologies. Renewed relevance of polysilicon both through material and technology advances [18][19][20][21] and applications [22][23][24][25] makes it a rapidly progressing technology.…”