Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

Prater, Walter L.; Allen, Emily; Lee, Wen-Y.; Toney, Michael F.; Daniels, J. S.; Hedstrom, J.

doi:10.1063/1.1691500

Cited by 9 publications

(7 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To calculate the grain size distribution of the FePt particles, the entire XRD data set was fitted to a model where the peak shapes contain contributions from non-uniform strain and grain size broadening. 28 The shape of each diffraction peak shape was then a convolution of the shapes due to grain-size broadening, which was assumed to originate from a lognormal distribution of grain sizes, [29][30] and to non-uniform strain, which was assumed to be Gaussian:…”

Section: Methodsmentioning

confidence: 99%

Agglomeration and sintering in annealed FePt nanoparticle assemblies studied by small angle neutron scattering and x-ray diffraction

et al. 2005

View full text Add to dashboard Cite

In this work we give a detailed account of the use of small angle neutron scattering to study the properties of polymer mediated, self assembled nanoparticle arrays as a function of annealing temperature. The results from neutron scattering are compared with those obtained from x-ray diffraction. Both techniques show that particle size increases with annealing temperatures of 580°C and above. They also show that the distribution of particle diameters is significant and increases with annealing temperature. The complementary nature of the two measurements allows a comprehensive structural model of the assemblies to be developed in terms of particle sintering and agglomeration. To realise the potential of nanoparticle assemblies as a monodispersed data storage medium the problem of particle separation necessary to avoid sintering and agglomeration during annealing must be addressed.

show abstract

Section: Methodsmentioning

confidence: 99%

Agglomeration and sintering in annealed FePt nanoparticle assemblies studied by small angle neutron scattering and x-ray diffraction

et al. 2005

View full text Add to dashboard Cite

show abstract

“…For applications where Ohmic losses are to be minimized, the role of solutes is largely a deleterious one, with the reduction in grain size and increased alloying content leading to interface and impurity scattering, respectively [12][13][14][15]. Correspondingly, thermal annealing of pure Cu is generally employed to reduce electrical resistivity during processing [13].…”

mentioning

confidence: 99%

Interplay between grain boundary segregation and electrical resistivity in dilute nanocrystalline Cu alloys

Kim

Chai

et al. 2016

Scripta Materialia

View full text Add to dashboard Cite

The relationships between microstructure, controlled by alloying elements prone to grain boundary segregation, and electrical resistivity in sputtered nanocrystalline Cu were investigated. We find a non-monotonic dependence of the mean grain size on solute concentration for both Cu-Nb and Cu-Fe dilute alloys, with a concentration regime where the grain size increases over that of pure Cu before refining with further alloying. The electrical resistivity follows the same trend, suggesting a non-equilibrium processing route that remarkably gives rise to dilute nanocrystalline Cu alloys with lower resistivity, thermal stability, and enhanced mechanical properties relative to their pure nanocrystalline counterpart. Nanocrystalline (NC) metals have been the subject of intense research activity, driven largely by technological interests in their high hardness and strength. The results from decades of experiments and simulations point to the governing role of deformation physics unique to its coarse-grained counterparts, including grain boundary (GB) sliding, nucleation of dislocations from GBs and their subsequent isolated propagation, GB rotation, and stress-assisted grain growth [1,2]. Owing to the large volume fraction of material in near-GB regions in nanocrystalline metals, the properties of these materials are governed by interfacial phenomena.

show abstract

“…14 Prater et al found that low concentrations of oxygen in the sputtering atmosphere reduced grain size, smoothed the interface and reduced the resistivity of ion-beam deposited Cu thin films. 15 To summarize the previous work, spin-valve GMR and resistivity have been improved by the introduction of oxygen under various concentrations during sputtering and for different film deposition processes. It appears that oxygen favorably alters the film microstructure and smoothes the interfaces, which increases specular scattering of conduction electrons at the interfaces.…”

mentioning

confidence: 99%

“…Some work indicates that oxygen acts as a surfactant floating out on the growing surface, 8,9,11 while Miura et al and Prater et al proposed that the oxygen is incorporated in the film. 10,15 Hence, the mechanism of interface smoothing is still unknown and is, perhaps, dependent on oxygen concentration and film processing.…”

mentioning

confidence: 99%

Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

Prater

Allen

Lee

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dcmagnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

show abstract

Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

Cited by 9 publications

References 14 publications

Agglomeration and sintering in annealed FePt nanoparticle assemblies studied by small angle neutron scattering and x-ray diffraction

Agglomeration and sintering in annealed FePt nanoparticle assemblies studied by small angle neutron scattering and x-ray diffraction

Interplay between grain boundary segregation and electrical resistivity in dilute nanocrystalline Cu alloys

Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

Contact Info

Product

Resources

About