Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Zamir, S.; Meyler, B.; Salzman, J.

doi:10.1016/s0022-0248(02)01578-6

Cited by 21 publications

(16 citation statements)

References 13 publications

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“…Several methods have been proposed to address the issue of tensile stress and associated cracking, including the use of patterned substrates to guide the cracks in masked or etched parts of the Si substrates, [2,3] the use of compliant substrates, [4,5] inserting low-temperature AlN interlayers [6] and introducing AlGaN intermediate layers [7,8] . In terms of dislocation density reduction, the use of AlN/GaN superlattices [9] and in-situ SiN x masking layers [10,11] have been shown to be effective.…”

Section: Introductionmentioning

confidence: 99%

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

et al. 2009

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The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.

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Section: Introductionmentioning

confidence: 99%

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

et al. 2009

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“…GaN cannot be grown as a buffer layer directly on Si substrates owing to the poor nucleation of GaN on Si [23]. Therefore, many other growth techniques have been used; they include a GaN-free buffer layer [24], [25], a strained layer of AlN/GaN superlattices (SLs) [26], a single AlN buffer layer or multiple layers of AlN/GaN [27]- [29], an AlGaN buffer layer with an Al gradient [30], a patterned Si substrate [31], [32], selective growth [33], [34], a porous Si substrate [35], and Si on an insulator as a compliant substrate [36]. Although the successful growth of crack-free and highquality GaN epilayer on Si has been reported, the white-light LEDs performance of InGaN-based LEDs on Si remains very poor and no major breakthrough in their emission efficiency or light output power has been made [37]- [41].…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Lee

Lin

et al. 2014

IEEE J. Quantum Electron.

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In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitting diodes (LEDs) on 6-inch Si (111) substrates to suppress cracking and improve the crystalline quality and emission efficiency. The effect of CBLS and QSLs-EBL on the crystalline quality and emission efficiency of InGaN-based LEDs on Si substrates was studied in detail. Optical microscopic images revealed the absence of cracks and Ga melt-back etching. The atomic force microscopy images exhibited that the root-meansquare value of the surface morphology was only 0.82 nm. The full widths at half maxima of the (0002) and (1012) reflections in the double crystal X-ray rocking curve were ∼330 and 450 arcs, respectively. The total threading dislocation density, revealed by transmission electron microscopy, was <6 × 10 8 cm −2 . From the material characterizations, described above, blue and white LEDs emitters were fabricated using the epiwafers of InGaNbased LEDs on 6-inch Si substrates. The blue LEDs emitter that comprised blue LEDs chip and clear lenses had an emission power of 490 mW at 350 mA, a wall-plug efficiency of 45% at 350 mA, and an efficiency droop of 80%. The white LEDs emitter that Manuscript comprised blue LEDs chip and yellow phosphor had an emission efficiency of ∼110 lm/W at 350 mA and an efficiency droop of 78%. These results imply that the use of a CBLS and QSLs-EBL was found to be very simple and effective in fabricating high-efficiency InGaN-based LEDs on Si for solid-state lighting applications.Index Terms-GaN, composite buffer layer structure, quaternary superlattices EBL, Si substrate, MOCVD, light-emitting diodes (LEDs).

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“…Therefore, many studies have focused on stress and defect management techniques to reduce the density of cracks and dislocations. [1][2][3] One of the most promising techniques for heteroepitaxy of GaN on Si is epitaxial lateral overgrowth (ELO). The lateral overgrowth of GaN on Si(111) has been investigated by several groups, and a dramatic decrease in dislocation density in GaN has been obtained.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High‐Dose, N⁺ Ion Implantation

Kim

Lee

Jang

et al. 2010

Chemical Vapor Deposition

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An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N þ ion implantation.ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N þ ion-implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a flat surface. Scanning cathodoluminescence (CL) microscopy and high resolution X-ray diffraction (HRXRD) confirm the high optical and crystalline quality of the ELOG GaN layer.

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Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Cited by 21 publications

References 13 publications

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High‐Dose, N⁺ Ion Implantation

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Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Cited by 21 publications

References 13 publications

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High‐Dose, N+ Ion Implantation

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Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High‐Dose, N⁺ Ion Implantation