Reduction of CNT Interconnect Resistance for the Replacement of Cu for Future Technology Nodes

Ward, Jonathan; Nichols, J. Tyler; Stachowiak, Tim; Ngo, Quoc; Egerton, E. James

doi:10.1109/tnano.2011.2148725

Cited by 13 publications

(11 citation statements)

References 32 publications

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“…In the global interconnect with resistance as the main factor affecting delay, CNT takes full advantage of its high mobility and long MFP, surpassing Cu with lower resistance. For the global interconnect scale, CNT-based interconnect lines have at least 20% lower resistance compared to that of Cu lines and an optimized RC delay of more than 30%, which greatly enhances the performance of interconnecting transmission [ 22 , 39 , 74 , 75 ]. Additionally, because the transmission length is long enough, the negative effects of non-ideal factors such as contact and defects are relatively reduced [ 22 , 50 , 76 ].…”

Section: On-chip Interconnectmentioning

confidence: 99%

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Chen

Zhou

et al. 2022

Micromachines

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Along with deep scaling transistors and complex electronics information exchange networks, very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power consumption. In order to meet the demand of data-abundant workloads and their energy efficiency, improving only the transistor performance would not be sufficient. Super high-speed microprocessors are useless if the capacity of the data lines is not increased accordingly. Meanwhile, traditional on-chip copper interconnects reach their physical limitation of resistivity and reliability and may no longer be able to keep pace with a processor’s data throughput. As one of the potential alternatives, carbon nanotubes (CNTs) have attracted important attention to become the future emerging on-chip interconnects with possible explorations of new development directions. In this paper, we focus on the electrical, thermal, and process compatibility issues of current on-chip interconnects. We review the advantages, recent developments, and dilemmas of CNT-based interconnects from the perspective of different interconnect lengths and through-silicon-via (TSV) applications.

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Section: On-chip Interconnectmentioning

confidence: 99%

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Chen

Zhou

et al. 2022

Micromachines

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“…Surface scattering increases as the critical dimensions of the Cu line becomes smaller than the bulk mean free path of the electrons. To solve this issue, new material such as tungsten (W), silicides, carbon nanotube, or collective excitations could be an alternative to Cu as interconnects [42,43]. Even though the bulk resistivity of W and silicide films is much larger than that of Cu film, the shorter mean free path of the electrons will lower the surface scattering effect.…”

Section: Width Effect On Resistivity Of Cumentioning

confidence: 99%

Copper Metal for Semiconductor Interconnects

Cheng¹,

Lee²,

Huang³

2018

Noble and Precious Metals - Properties, Nanoscale Effects and Applications

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Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.

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“…1,2 To overcome this BEOL interconnect bottleneck, the microelectronics community has extensively searched for alternative interconnect metal candidates which can provide performance superior to Cu, Co, and Ru within the extremely scaled sub-10 nm domain. 3–5 The line resistance of a metal interconnect is described by R / L = ρ / d 2 , where R , L , d , and ρ represent resistance, length, diameter, and resistivity, respectively. If only bulk material properties are considered, Cu is one the best metals available due to its low bulk resistivity of 1.7 μΩ cm.…”

Section: Introductionmentioning

confidence: 99%

“…Looking for metal interconnects to replace Cu (and Ru in the future) (post-Cu interconnects) have now become an intensive research activity. 3,[11][12][13][14] The post-Cu interconnects should satisfy several requirements for practical integration into current EUV scale CMOS technology. First, as explained above, the interconnects should have better dimensional scalability such that it can offer low resistivity at nanoscale dimensions.…”

Section: Introductionmentioning

confidence: 99%