Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

Jung, Hyung-Suk; Yu, Il-Hyuk; Kim, Hyo Kyeom; Lee, Sang Young; Lee, Joohwi; Choi, Yu‐Jin; Chung, Yoon Jang; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong

doi:10.1109/ted.2012.2204996

Cited by 12 publications

(9 citation statements)

References 23 publications

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“…Compared to the YN sample, there is still an amount of GeO x in the interface for the YON sample, which is 11.33% described as the GeO x /Ge-Sub peak-area ratio. This may be formed during the formation of YGeO x N y , due to the oxidation of Ge surface by the in-diffused O [4]. The YN sample exhibits much less GeO x (1.5%) than the YON sample, due to the absorption of in-diffused O by YN IPL prior to Ge substrate, which could effectively suppress the diffusion of O to the Ge surface and thus the formation of Ge oxide.…”

Section: Resultsmentioning

confidence: 99%

“…However, direct deposition of high-k dielectric on Ge substrate usually results in a poor interface with high interface-state density (D it ). Specifically, when HfO 2 , which is considered to be the most widelyused dielectric for Si MOSFET, is used for Ge MOSFET, the parasitically grown unstable GeO x (x<2) between HfO 2 and Ge substrate severely degrades its interface quality [4]. Moreover, HfGeO x formed by the intermixing between Ge substrate (or GeO x ) and HfO 2 dielectric will also result in the increased D it because of the fivefold coordinated Hf in HfGeO x [5].…”

Section: Introductionmentioning

confidence: 99%

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Passivation of HfO₂/Ge interface with YON fabricated by different approaches

Cheng

Liu

et al. 2017

MATEC Web Conf.

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Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface for better interfacial and electrical properties of Ge metal-oxidesemiconductor (MOS) capacitor. Two different approaches were used to prepare the YON IPL, one is to deposit YON directly by sputtering Y2O3 target in Ar+N2 ambient, and the other is to deposit YN first by sputtering Y target in Ar+N2 ambient followed by the annealing in N2+O2 to convert YN to YON. Experimental results indicate that the MOS capacitor fabricated by the latter approach could achieve more excellent interfacial and electrical properties due to more effective suppression of the formation of Ge oxides.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Passivation of HfO₂/Ge interface with YON fabricated by different approaches

Cheng

Liu

et al. 2017

MATEC Web Conf.

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“…The energy scale of the three samples is calibrated by fixing the Ge 3d peak of the Ge substrate at a binding energy (BE) of 28.8 eV to eliminate the charging effect on the samples. Because of a strong overlap between the Ge 3d peak and Hf or Ta peak, 4,24 the Ge 2p 3/2 core level spectrum of the samples is used, as shown in Fig. 4.…”

Section: Function Difference Between the Al Gate Andmentioning

confidence: 99%

“…3 However, when HfO 2 was deposited on the Ge substrate directly, unstable GeO x was parasitically grown. 4 Moreover, defective HfGeO x was formed due to the intermixing between the Ge substrate and HfO 2 dielectric, 5,6 and so severely degraded the quality of the HfO 2 /Ge interface and thus the electrical properties of the device. On the contrary, La 2 O 3 could react strongly with the Ge substrate to form a stable germanate layer for suppressing the formation of GeO x and outdiffusion of Ge, thus creating a superior interface with the Ge substrate.…”

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confidence: 99%

Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Zhang

Liu

et al. 2016

Applied Physics Letters

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The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO 2 gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeO x and LaHfO x , which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 Â 10 11 cm À2 eV À1) and oxide-charge density (À3.90 Â 10 12 cm À2), low gate leakage current density (1.77 Â 10 À4 A/cm 2 at V g ¼ V fb þ 1 V), and high reliability under high-field stress. Published by AIP Publishing.

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“…[ 9 ] An alternative approach to avoid such problems could be exploiting a different high‐ k gate dielectric film from the most prevailing HfO 2 ‐based films. [ 10 ] Among the various high‐ k dielectric films, Y 2 O 3 should deserve closer attention because of the following reasons.…”

Section: Introductionmentioning

confidence: 99%

Trap Reduction through O₃ Post‐Deposition Treatment of Y₂O₃ Thin Films Grown by Atomic Layer Deposition on Ge Substrates

Kim

Kwon

Lim

et al. 2021

Adv Elect Materials

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For Ge‐based metal‐oxide‐semiconductor field‐effect transistor application, high‐k Y2O3 thin films are deposited on Ge single‐crystal substrate using atomic layer deposition. The primary drawbacks of a metal‐oxide‐semiconductor capacitor with pristine Y2O3 are large hysteresis and high leakage current. Through forming gas annealing (FGA), the leakage current can be reduced by approximately three orders of magnitude, along with the reduction of interface trap density. However, there is still a large hysteresis in the capacitance–voltage curves. O3 post‐deposition annealing (OPA) is used to solve the problem. The formation of the YGeOx interfacial layer through OPA and the reduction of the defect level of the Y2O3 thin film effectively decrease the hysteresis, which also decreases the leakage current. Additionally, the hysteresis is 690 mV when only FGA is performed. However, it is further reduced to 260 mV through OPA. Moreover, the remote oxygen scavenging effect using TiN/Pt electrodes prevents an unintentional increase in equivalent oxide thickness (EOT). The 4.7 nm thick Y2O3 film results in an EOT of 1.77 nm and leakage current density of 2.1 × 10−7 A cm−2 (at flat band voltage—1 V) after the OPA.

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Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

Cited by 12 publications

References 23 publications

Passivation of HfO₂/Ge interface with YON fabricated by different approaches

Passivation of HfO₂/Ge interface with YON fabricated by different approaches

Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Trap Reduction through O₃ Post‐Deposition Treatment of Y₂O₃ Thin Films Grown by Atomic Layer Deposition on Ge Substrates

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Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

Cited by 12 publications

References 23 publications

Passivation of HfO2/Ge interface with YON fabricated by different approaches

Passivation of HfO2/Ge interface with YON fabricated by different approaches

Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates

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Product

Resources

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Passivation of HfO₂/Ge interface with YON fabricated by different approaches

Passivation of HfO₂/Ge interface with YON fabricated by different approaches

Trap Reduction through O₃ Post‐Deposition Treatment of Y₂O₃ Thin Films Grown by Atomic Layer Deposition on Ge Substrates