Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers

Mansoori, A.; Addamane, Sadhvikas; Renteria, Emma J.; Shima, Darryl M.; Behzadirad, Mahmoud; Vadiee, Ehsan; Honsberg, Christiana B.; Balakrishnan, Ganesh

doi:10.1016/j.solmat.2018.05.008

Cited by 14 publications

(8 citation statements)

References 33 publications

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“…Nevertheless, these parameters are close to recently reported progress on GaSb-on-GaAs cells. In particular, the measured JSC and FF are in between the values reported in [31] and [33]. Both references used front/back contact configurations.…”

Section: Gasb-on-gasb Control Solar Cellmentioning

confidence: 61%

“…It seems that this partially compensated for the much larger lattice-mismatch (12% vs 8% in the case of GaSb-on-GaAs cells). The use of a thicker buffer (twice or more as thick as the ones used in [31] and [33]) also likely contributed to the lattice-mismatch compensation. However, the VOC is lower in both cases, suggesting a still higher TDD in the active zone.…”

Section: Gasb-on-gasb Control Solar Cellmentioning

confidence: 99%

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GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

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Section: Gasb-on-gasb Control Solar Cellmentioning

confidence: 61%

Section: Gasb-on-gasb Control Solar Cellmentioning

confidence: 99%

GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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“…Gallium antimonide (GaSb) is a valuable material for applications in field-effect transistors, multi-junction solar cells, lasers, infrared detectors, and Shockley diodes. In addition, the molecular beam epitaxial is a common method to grow materials. − Moreover, the reason why the development opportunity is taken by various electronic devices is that GaSb keeps some advantages of physical properties …”

Section: Introductionmentioning

confidence: 99%

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Zhu

Kang

et al. 2023

J. Phys. Chem. C

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Alloying is one of the most common approaches to modulate the properties of semiconductors, such as indium antimonide (InSb) with practical applications in mid-infrared optoelectronics. Thermal conductivity plays a key role in governing the operating performance of devices, and the high-efficiency regulation is of great significance to desirable applications. In this study, we studied the thermal transport properties of InSb, GaSb, and their Ga x In 1−x Sb alloys by solving the Boltzmann transport equation based on first-principles calculations. The thermal conductivity of Ga x In 1−x Sb alloys (x = 0.25, κ = 9.21 Wm −1 K −1 ; x = 0.5, κ = 11.22 Wm −1 K −1 ; and x = 0.75, κ = 15.45 Wm −1 K −1 ) is enhanced compared with that of InSb (κ = 5.15 Wm −1 K −1 ), which is unlike the conventional belief that alloying usually reduces thermal conductivity. Through fundamental analysis of phonon transport properties, the higher phonon group velocity and phonon relaxation time caused by the weak phonon anharmonicity lead to higher thermal conductivity of the Ga x In 1−x Sb alloys. The weakened polarization of Ga x In 1−x Sb alloys occurring in the alloying process generates the increased thermal conductivity, which can be figured out by analyzing the orbital-projected electronic density of states and the electron localization functions. The underlying mechanism of unconventional high thermal conductivity of the Ga x In 1−x Sb alloys in this study would provide guidance for the device applications accompanied by thermal transport.

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“…Despite many years of development, the performances of the structures grown on the IMF-GaSb-buffered GaAs substrates are lower than those grown on the native substrates [11][12][13][14]. This justifies renewed efforts of many research groups to optimize this relaxation mode either by optimizing the growth conditions [15,16] or by applying an additional buffer in a GaSb/GaAs system [17][18][19][20][21]. The latter approach has shown significant promise.…”

Section: Introductionmentioning

confidence: 99%

“…The reduction of the threading dislocation density was visualized in TEM images, but no reference to the quantitative analysis was given. The influences of the growth temperature and the distance of the AlSb layer from the GaSb/GaAs interface on TDD were investigated by Mansoori et al [21]. The authors concluded that both low-temperature growth at 420 °C and 250 nm distance promoted the reduction of threading dislocations.…”

Section: Introductionmentioning

confidence: 99%

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

et al. 2019

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We report on the role of AlSb material in the reduction of threading dislocation density (TDD) in the GaSb/AlSb/GaAs system. The AlSb layers were grown using low-temperature (LT) MBE, exploiting the interfacial misfit (IMF) dislocation array. AlSb layers with four different thicknesses in the range of 1–30 nm were investigated. The results showed the inhibiting role of LT-AlSb layers in the reduction of TDD. Values of TDD as low as 2.2 × 106 and 6.3 × 106 cm−2 for samples with thin and thick AlSb layers were obtained, respectively. The filtering role of AlSb material was proven despite the IMF-AlSb/GaAs interface’s imperfectness caused by the disturbance of a 90° dislocation periodic array by, most likely, 60° dislocations. The dislocation lines confined to the region of AlSb material were visible in HRTEM images. The highest crystal quality and smoother surface of 1.0 μm GaSb material were obtained using 9 nm thick AlSb interlayer. Unexpectedly, the comparative analysis of the results obtained for the GaSb/LT-AlSb/GaAs heterostructure and our best results for the GaSb/GaAs system showed that the latter can achieve both higher crystal quality and lower dislocation density.

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Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers

Cited by 14 publications

References 33 publications

GaSb-based solar cells for multi-junction integration on Si substrates

GaSb-based solar cells for multi-junction integration on Si substrates

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

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Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers

Cited by 14 publications

References 33 publications

GaSb-based solar cells for multi-junction integration on Si substrates

GaSb-based solar cells for multi-junction integration on Si substrates

Unexpected Enhanced Thermal Conductivity of GaxIn1–xSb Ternary Alloys

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

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Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys