Reducing p-type Schottky contact barrier in metal/ZnO heterostructure through Ni-doping

A graphene/Janus B2P6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

“…[1][2][3][4][5][6] However, the frequent formation of contact resistance at metal/semiconductor interfaces hinders the injection efficiency of carriers in FETs, which severely restricts the performance of 2D devices. [7][8][9][10][11] Several ways are found to lower the Schottky barrier, such as defects, 12 doping 13 and picking an appropriate semiconductor channel material 14 or metal electrode. 15 Among these, graphene (GR) as a metal electrode is widely applied in FETs.…”

Band offset engineering at C2N/MSe2 (M = Mo, W) interfaces

“…Whatever, the band edge alignment of constituting components, with respect to each other, is a key parameter determining the heterostructure device performance. 14,15 For photocatalytic applications, a heterostructure with a type-II band alignment conguration demonstrated to efficiency separate the photogenerated electron-hole pairs at the interface for highly efficient water reduction and oxidation. 6,16 In such a type-II conguration, the magnitude of the conduction band offset (CBO; dened as the difference in the electron affinities of two constituting components) and valence band offset (VBO; the difference in the ionization potentials) determine the magnitude of the built-in electric at the interface that in turn separates the photogenerated electrons and holes in space.…”

A comparative study on the properties of Er Zn O and Sm Zn O nanostructured thin films for electronic device applications

“…Metal oxide semiconductors have been a subject of intensive investigations over the last decades due to their fascinating properties and versatile applications in optoelectronics [1]. Among these semiconductors, Zinc oxide (ZnO) is the most widely studied semiconductor.…”

“…The oxygen vacancies which are the main defects in ZnO result in poor electrical properties due to the electron tunneling into the ZnO from the metal [11]. The electrical, structural, and optical properties of ZnO can be altered by doping with metals such as nickel (Ni), platinum (Pt), silver (Ag), gold (Au), just to mention a few [1,7,12,13]. Rare earth (RE) metals have also been reported to improve the SBD of ZnO.…”