“…Similar to staggered OTFTs, the R c of coplanar OTFTs is also composed of two parts: the injection resistance ( R inj ) and the access resistance ( R acc ). , R inj stems from the carrier injection at the electrode/organic semiconductor interface, which is significantly affected by the injection barrier arising from mismatching between the Fermi level of the electrode and the transport energy level of the OSC, , and the small injection area results in a tiny fraction of the gate-field-induced carrier injection, while R acc originates from the resistance of transporting carriers to the channel after the carriers are injected into the OSC, which is primarily impacted by molecular packing and conductivity of the OSC near the electrode edge . Currently, various attempts have been implemented to improve the R c , such as functionalizing electrodes with self-assembled monolayers (SAMs), , inserting an injection layer between the OSC and metal electrode, , adopting carbon-based conductors as electrodes, , and doping semiconductors. , These approaches mainly focused on reducing the R inj through tuning the energy level alignment or improving molecular packing of the OSC on the electrode. , …”