Reduced Threshold Current in NbO<sub>2</sub> Selector by Engineering Device Structure

Liu, Xinjun; Nandi, Sanjoy Kumar; Venkatachalam, Dinesh Kumar; Belay, K.; Song, Sannian; Elliman, R. G.

doi:10.1109/led.2014.2344105

Cited by 58 publications

(41 citation statements)

References 14 publications

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“…It might even be increased by stacking multiple layers of passive matrices to a 3D structure. [7][8][9][10][11][12][13][14][15][16][17][18] Threshold devices show an abrupt resistance change at a certain voltage stress V Th,ON . [ 1,4 ] This serious issue is alleviated by either complementary resistive switching devices or by the integration of a selector device in addition to the passive ReRAM, so called "1S1R" structures.…”

Section: Introductionmentioning

confidence: 99%

“…Among the different selectors threshold switching devices are highly interesting as they are favorable for lowvoltage operation and often provide an inherent combination of the threshold-type selector property and the memristive nonvolatile switching in a single "1Th1M" cell. [ 9,[12][13][14]18 ] The second issue is the absolute change in the current at the threshold voltage that can be huge, clearly more than a factor of hundred. [7][8][9][10][11][12][13][14][15][16][17][18] Threshold devices show an abrupt resistance change at a certain voltage stress V Th,ON .…”

Section: Introductionmentioning

confidence: 99%

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Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Funck

Menzel

Aslam

et al. 2016

Adv Elect Materials

105

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Volatile threshold switching devices have attracted great attention for use as selectors in passive crossbar arrays. These devices show an abrupt hysteretic jump in the current–voltage characteristic and thus offer very high selectivity. As this nonlinearity appears for either voltage polarity, threshold switches are an ideal selector for bipolar‐switching redox‐based resistive memories. To date, the predominant explanation of the threshold‐switching phenomenon in NbO2 and related materials is the insulator‐to‐metal transition that occurs at a certain temperature and is connected to a phase transition. However, some essential experimental findings are not satisfactorily explained. Here, a multidimensional simulation of the threshold switching in NbO2 is presented that overcomes these shortcomings. The model is based on an electric field‐induced thermal runaway that increases the amount of mobile charge carriers in the device. Applying this model in a simulation correctly predicts the experimentally observed threshold‐type current–voltage characteristic, inclusive of important features like the narrow opening of the hysteresis and the magnitude of the current jump. Furthermore, the simulation enables to discuss different influencing parameters independently at spatial resolution. The model is also applicable to a wider class of materials showing the threshold switching, but does not show a temperature‐induced insulator‐to‐metal transition.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Funck

Menzel

Aslam

et al. 2016

Adv Elect Materials

105

View full text Add to dashboard Cite

show abstract

“…Therefore we assume that threshold switching in our devices follows conduction paths associated with defects such as twin domain boundaries, in which thermally confined filaments are locally heated above the MIT temperature [39,40,41]. Alternatively, filamentary paths in NbO 2 films could be confined to the interface with the surface Nb 2 O 5 layer similar to what was observed in Ref.…”

Section: Resultsmentioning

confidence: 60%

Preparation, characterization, and electrical properties of epitaxial NbO₂thin film lateral devices

Joshi¹,

Senty²,

Borisov³

et al. 2015

J. Phys. D: Appl. Phys.

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Epitaxial NbO 2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al 2 O 3 (0001) substrates. The Ar/O 2 total pressure during growth was varied to demonstrate the gradual transformation between NbO 2 and Nb 2 O 5 phases, which was verified using x-ray diffraction, x-ray photoelectron spectroscopy, and optical absorption measurements. Electric resistance threshold switching characteristics were studied in a lateral geometry using interdigitated Pt top electrodes in order to preserve the epitaxial crystalline quality of the films.Volatile and reversible transitions between high and low resistance states were observed in epitaxial NbO 2 films, while irreversible transitions were found in case of Nb 2 O 5 phase. Electric field pulsed current measurements confirmed thermally-induced threshold switching.

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“…Experimentally, NbO x -based selector devices with high on current density (> 3 Â10 7 A/cm 2 ) and high selectivity ($10 4 ) have been demonstrated [138], [139]. What is more, it was shown that the selector current path can be confined in a hybrid NbO 2 /Nb 2 O 5 or NbO 2 = HfO 2 device and therefore reduce the effective device area [140]. As both on and off switching speeds of a 110 Â 110 nm 2 device are within $1-2 ns [7], the application of NbO 2 selectors would be of significant interest if near-ideal selectivity could be demonstrated.…”

Section: A Mott Selectors In 1s1r Arraysmentioning

confidence: 99%

Mott Memory and Neuromorphic Devices

2015

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| Orbital occupancy control in correlated oxides allows the realization of new electronic phases and collective state switching under external stimuli. The resultant structural and electronic phase transitions provide an elegant way to encode, store, and process information. In this review, we examine the utilization of Mott metal-to-insulator transitions, for memory and neuromorphic devices. We emphasize the overarching electron-phonon coupling and electron-electron interaction-driven transition mechanisms and kinetics, which renders a general description of Mott memories from aspects such as nonvolatility, sensing scheme, read/write speed, and switching energy. Various memory and neuromorphic device architectures incorporating phase transition elements are reviewed, focusing on their operational principles. The role of Peierls distortions and crystal symmetry changes during phase change is discussed. Prospects for such orbitronic devices as hardware components for information technologies are summarized.

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Reduced Threshold Current in NbO₂ Selector by Engineering Device Structure

Cited by 58 publications

References 14 publications

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Preparation, characterization, and electrical properties of epitaxial NbO₂thin film lateral devices

Mott Memory and Neuromorphic Devices

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Reduced Threshold Current in NbO2 Selector by Engineering Device Structure

Cited by 58 publications

References 14 publications

Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

Preparation, characterization, and electrical properties of epitaxial NbO2thin film lateral devices

Mott Memory and Neuromorphic Devices

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Product

Resources

About

Reduced Threshold Current in NbO₂ Selector by Engineering Device Structure

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Preparation, characterization, and electrical properties of epitaxial NbO₂thin film lateral devices