Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

Abstract

This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.