This paper describes highly efficient InGaN-based light-emitting diodes (LEDs) grown on volcano-shaped patterned sapphire substrates with embedded SiO2 (SVPSS).
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).
This paper demonstrates that the optimal light extraction enhancement of the 2-D photonic crystals (PhCs) light-emitting diodes (LEDs) among different air duty cycles (ADCs) is independent of the geometry and the shape of the 2-D PhCs. Moreover, it also discusses that the side-directional emission property of the 2-D PhCs LEDs in hexagonal lattice arrangement (HLA) is better than that in square lattice arrangement (SLA). Finally, the light output power of the 2-D PhCs LEDs in SLA and in HLA with the ADC of 51% are significantly improved by 60.4% and 81.9%, respectively, as compared with the reference LED at an injection current of 350 mA.
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