Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111)

Hartmann, Jean‐Michel; Papon, Anne‐Marie; Destefanis, V.; Billon, T.

doi:10.1016/j.jcrysgro.2008.08.062

Cited by 82 publications

(88 citation statements)

References 23 publications

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“…The thicker HT layer then provides a region in which any threading dislocation (TD) arms can glide and eliminate, thereby reducing their number reaching the surface of the buffer. The results of our work and of others [8][9][10][11] show that it is very challenging to grow smooth, high quality epitaxial layers compared to the (100) orientation. The main obstacle is the 4.2% lattice mismatch between Ge and Si.…”

Section: Introductionmentioning

confidence: 72%

“…12 Other techniques that have been tried include selective growth techniques such as aspect ratio trapping (ART) and epitaxial lateral overgrowth (ELO), 13,14 which is also quite common in III-V growth. 15 In previous reports of layers grown using the low temperature/high temperature technique, 10,11 thick LT layers were employed to allow for full relaxation and a smooth surface prior to HT layer growth. Research then focussed on details of the HT layers.…”

Section: Introductionmentioning

confidence: 99%

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High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Dobbie¹,

Myronov²,

Leadley³

2013

Journal of Applied Physics

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Epitaxial growth of Ge on Si has been investigated in order to produce high quality Ge layers on (110)- and (111)-orientated Si substrates, which are of considerable interest for their predicted superior electronic properties compared to (100) orientation. Using the low temperature/high temperature growth technique in reduced pressure chemical vapour deposition, high quality (111) Ge layers have been demonstrated almost entirely suppressing the formation of stacking faults (< 107 cm−2) with a very low rms roughness of less than 2 nm and a reduction in threading dislocation density (TDD) (∼ 3 × 108 cm−2). The leading factor in improving the buffer quality was use of a thin, partially relaxed Ge seed layer, where the residual compressive strain promotes an intermediate islanding step between the low temperature and high temperature growth phases. (110)-oriented layers were also examined and found to have similar low rms roughness (1.6 nm) and TDD below 108 cm−2, although use of a thin seed layer did not offer the same relative improvement seen for (111).

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Section: Introductionmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Dobbie¹,

Myronov²,

Leadley³

2013

Journal of Applied Physics

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“…As the growth rate is extremely low (∼0.007 nm · s −1 ) at low temperature, a so-called low-temperature/high-temperature (LT/HT) two-step growth technique has been developed: [6][7][8][9] once a thin and flat Ge layer is formed at LT, Ge grows faster on the thin Ge template at HT. On the other hand, the growth rate of Si in SE method can be as high as 3.3 nm · s −1 at temperatures below 360…”

mentioning

confidence: 99%

Sputter Epitaxial Growth of Flat Germanium Film with Low Threading-Dislocation Density on Silicon (001)

Yeh

Matsumoto

Sugihara

et al. 2014

ECS J. Solid State Sci. Technol.

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Fast epitaxy of Ge on Si(001) was realized by DC sputtering at 2.1 nm · s −1 and 360 • C; the resulting film was optically flat without a cross-hatch structure. After annealing at 700 • C, 90 • -full-edge dislocations dominated the Ge-Si interface and the threadingdislocation density (TDD) of the Ge film was below 10 4 cm −2 , which is three orders of magnitude lower than the value of Ge films prepared by other methods. The extremely low TDD might be attributable to the spaces vacated by desorbed Ar within the film that served as dislocation sinks during sputtering. Acceptor-band conduction, which was at 0.02 eV above the valence band and was induced by dislocations, was observed with a hole mobility of 3-10 cm 2 · V −1 · s −1 in the film prepared without annealing. After annealing at 700 • C, the ionized-defect scattering in the film was considerably decreased and a mobility of 1180 cm 2 · V −1 · s −1 was obtained. The direct band gap energy of the film prepared without annealing was 0.81 eV, and became 0.79 eV after annealing.

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“…integration with the existing silicon process technology and it has been a hot research topic for many years. [6][7][8][9] The main problem arises from the 4.2 % lattice mismatch (at 300K) between Ge and Si which ends up in misfit dislocations and other defects (e.g. twins).…”

Section: Introductionmentioning

confidence: 99%

“…twins). Indeed, using buffer layers and specific growth processes, high quality c-Ge can be epitaxially grown on Si using several growth steps involving temperatures above 600 • C. 10,8 However, low temperature deposition is useful for many applications. Among the benefits of low temperature epitaxy we would like to emphasize: i) the absence of thermal strain induced by differences in thermal expansion coefficients; ii) having a hydrogen terminated surface (less reactive), which is a key for low impurity incorporation in non UHV system; and iii) significant cost reduction thanks to well established low temperature plasma CVD reactors.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

et al. 2014

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International audienceWe report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 106 cm−2 are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD

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Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111)

Cited by 82 publications

References 23 publications

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Sputter Epitaxial Growth of Flat Germanium Film with Low Threading-Dislocation Density on Silicon (001)

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

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