2019
DOI: 10.1002/aenm.201901823
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Reduced Nonradiative Energy Loss Caused by Aggregation of Nonfullerene Acceptor in Organic Solar Cells

Abstract: current. The latter is the value of qV OC a solar cell with that bandgap would have at a temperature of 300 K illuminated by 1 sun unconcentrated illumination and assuming emission of luminescence into the 2π halfspace above the solar cell. [16][17][18][19] 2) qV OC SQ − qV OC rad (ΔE 2 ) is the loss due to the absorption edge being nonabrupt and therefore primarily due to radiative recombination below the bandgap. [20][21][22][23][24] 3) The third loss is due to nonradiative recombination (ΔE 3 ). As the firs… Show more

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Cited by 76 publications
(50 citation statements)
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References 49 publications
(150 reference statements)
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“…The expansion also accompanies the reduction of disorder (Figure b), which is evidenced by the narrowing of Urbach tails of both bulk and charge‐transfer (CT) states. The blueshift of the band edge as well as the reduced disorder are also coherent with the observed charge transport improvement in ternary blends, where the morphological evolution upon adding IDIC leads to the reduced disorder and isolated domain formation via increased crystallization of PM6 while forming an intimate mixture of acceptor domains …”
Section: Resultssupporting
confidence: 71%
“…The expansion also accompanies the reduction of disorder (Figure b), which is evidenced by the narrowing of Urbach tails of both bulk and charge‐transfer (CT) states. The blueshift of the band edge as well as the reduced disorder are also coherent with the observed charge transport improvement in ternary blends, where the morphological evolution upon adding IDIC leads to the reduced disorder and isolated domain formation via increased crystallization of PM6 while forming an intimate mixture of acceptor domains …”
Section: Resultssupporting
confidence: 71%
“…As listed in Table S9, the EQE EL value of the PM6:Y6-based devices processed from XY is an order of magnitude lower than that of CF, and the calculated DE Article non-fullerene acceptor Y6 in the XY-processed film, which led to the voltage drop of the resulting device. 44 In addition, to further test the universality of the PM6:DTY6 in other non-halogen solvents, toluene (TL) and 1,2,4-trimethyl-benzene (TMB) were selected as processing solvents to fabricated devices based on the blends of PM6:DTY6 and PM6:Y6. The J-V curves are presented in Figure S19 and the corresponding device data are summarized in Table S10.…”
Section: Articlementioning
confidence: 99%
“…[24] The T g is also a critical parameter even during the casting of the BHJ active layer, [25,26] and can be used to qualitatively predict the stability of organic semiconductor devices. [27,28] The emergence of nonfullerene small molecule acceptors (NFAs) [8,10,19,[29][30][31][32][33][34] has enriched, yet complicated matters. The differences between NFAs in molecular geometry, stiffness, and size might have a profound effect on T g and the aggregation behavior of the NFAs, optimization protocols, and stability of the active layer.…”
Section: Introductionmentioning
confidence: 99%
“…The emergence of nonfullerene small molecule acceptors (NFAs) [ 8,10,19,29–34 ] has enriched, yet complicated matters. The differences between NFAs in molecular geometry, stiffness, and size might have a profound effect on T g and the aggregation behavior of the NFAs, optimization protocols, and stability of the active layer.…”
Section: Introductionmentioning
confidence: 99%