Reduced Drift of CMOS ISFET pH Sensors Using Graphene Sheets

Panteli, Christoforos; Georgiou, Pantelis; Fobelets, Kristel

doi:10.1109/jsen.2021.3074748

Cited by 10 publications

(2 citation statements)

References 54 publications

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“…[428,443,444] A recent work by Panteli et al have demonstrated that graphene can also be used as a sensing film and used as a blocking layer for ion penetration reducing the sensor drift. [445] Zeng et al recently reported an EG-ISFET using graphene as the sensing film and obtained a sensitivity of 33 mV/pH with nearly driftfree operation. [446]…”

Section: Graphenementioning

confidence: 99%

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

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Section: Graphenementioning

confidence: 99%

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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“…Accordingly, neither remaining residues from the graphene transfer process nor the nature of the substrate underneath graphene could affect the pH sensitivity (21 mV/pH) . Moreover, the electrostatic gating effect induced by adsorption of H 3 O + or OH – ions (capacitive charging of the EDL) at the graphene surface was found to be the main mechanism responsible for the pH sensing. , One common aspect among all these studies is a focus on maintaining the graphene surface “clean”. This means that impacts of surface abnormalities such as functional groups on the pH sensing mechanism are either neglected or kept aside.…”

Section: Introductionmentioning

confidence: 99%

Defect Engineering of Graphene to Modulate pH Response of Graphene Devices

Angizi

Dalmieda

et al. 2021

Langmuir

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Graphene-based pH sensors are a robust, durable, sensitive, and scalable approach for the sensitive detection of pH in various environments. However, the mechanisms through which graphene responds to pH variations are not well-understood yet. This study provides a new look into the surface science of graphene-based pH sensors to address the existing gaps and inconsistencies among the literature concerning sensing response, the role of defects, and surface/solution interactions. Herein, we demonstrate the dependence of the sensing response on the defect density level of graphene, measured by Raman spectroscopy. At the crossover point (ID/IG = 0.35), two countervailing mechanisms balance each other out, separating two regions where either a surface defect induced (negative slope) or a double layer induced (positive slope) response dominates. For ratios above 0.35, the pH-dependent induction of charges at surface functional groups (both pH-sensitive and nonsensitive groups) dominates the device response. Below a ratio of 0.35, the response is dominated by the modulation of charge carriers in the graphene due to the electric double layer formed from the interaction between the graphene surface and the electrolyte solution. Selective functionalization of the surface was utilized to uncover the dominant acid–base interactions of carboxyl and amine groups at low pH while hydroxyl groups control the high pH range sensitivity. The overall pH-sensing characteristics of the graphene will be determined by the balance of these two mechanisms.

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From Transistors to Microsensors

Baltes

2023

75th Anniversary of the Transistor

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Reduced Drift of CMOS ISFET pH Sensors Using Graphene Sheets

Cited by 10 publications

References 54 publications

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Defect Engineering of Graphene to Modulate pH Response of Graphene Devices

From Transistors to Microsensors

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