Recycling of Zinc−Carbon Batteries into MnO/ZnO/C to Fabricate Sustainable Cathodes for Rechargeable Zinc‐Ion Batteries

Shangguan, Enbo; Wang, Liming; Wang, Yingchao; Li, Linpo; Chen, Mingxing; Qi, Jing; Wu, Chengke; Wang, Mingyu; Li, Quanmin; Gao, Shuyan; Li, Jing

doi:10.1002/cssc.202200720

Cited by 16 publications

(5 citation statements)

References 57 publications

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“…These behaviours and parameters are of great interest to the development of neuromorphic materials as well as new applications for sustainable electronics [ 28 , 29 , 30 , 31 ], as different transport mechanisms in the interface can help reduce the number of elements in a structure, making it efficient, reconfigurable, responsive, and low power where components can be passive (resistors, inductors, capacitors) or active (transistors, diodes).…”

Section: Introductionmentioning

confidence: 99%

MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

Neri-Espinoza,

Andraca-Adame,

Domínguez-Crespo

et al. 2024

Nanomaterials

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In recent years, advances in materials engineering based on adaptive electronics have found a new paradigm to optimize drawbacks in signal processing. A two-layer MnO/ZnO:Zn heterostructure envisioned for frequency adaptive electronic signal processing is synthesized by sputtering, where the use of internal states allows reconfigurability to obtain new operating modes at different frequency input signals. X-ray diffraction (XRD) analysis is performed on each layer, revealing a cubic structure for MnO and a hexagonal structure for ZnO:Zn with preferential growth in [111] and [002] directions, respectively. Scanning electron microscope (SEM) micrographs show that the surface of both materials is homogeneous and smooth. The thickness for each layer is determined to be approximately 106.3 nm for MnO, 119.3 nm for ZnO:Zn and 224.1 nm for the MnO/ZnO:Zn structure. An electrical characterisation with an oscilloscope and signal generator was carried out to obtain the time-response signals and current-voltage (I–V) curves, where no degradation is detected when changing frequencies within the range of 100 Hz to 1 MHz. An equivalent circuit is proposed to explain the effects in the interface. Measurements of switching speeds from high resistance state (HRS) to low resistance state (LRS) at approximately 17 ns, highlight the device’s rapid adaptability, and an estimated switching ratio of approximately 2 × 104 indicates its efficiency as a memristive component. Finally, the MnO/ZnO:Zn heterojunction delivers states that are stable, repeatable, and reproducible, demonstrating how the interaction of the materials can be utilised in adaptive device applications by applying frequencies and internal states to create new and innovative design schematics, thus reducing the number of components/connections in a system for future sustainable electronics.

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Section: Introductionmentioning

confidence: 99%

MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

Neri-Espinoza,

Andraca-Adame,

Domínguez-Crespo

et al. 2024

Nanomaterials

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“…A number of TMO structures involving ZnO and MnOx (such as MnOx/HfOx [20], Pt/MnOx/Pt [21], Pt/ZnO/Pt [22]), have reported resistive switching characteristics. All these behaviours are of great interest in the development of neuromorphic materials as well as new applications for sustainable electronics [23][24][25][26], as different transport mechanisms in the interface can help reduce the number of elements in a structure making it efficient, reconfigurable, fast-response and low power where components can be passive (resistors, inductors, capacitors) or active (transistors, diodes).…”

Section: Introductionmentioning

confidence: 99%

MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

Neri-Espinoza,

Andraca-Adame,

Domínguez-Crespo

et al. 2024

Preprint

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In the last years, advances in materials engineering based on adaptive electronics have found a new paradigm to optimize drawbacks in signal processing. A two-layer MnO/ZnO:Zn heterostructure envisioned for frequency adaptive electronic signal processing is synthesized by sputtering where the use of internal states allows reconfigurability to obtain new operating modes at different frequency input signals. An X-Ray Diffraction (XRD) is performed on each layer, MnO:Mn had a cubic and ZnO:Zn a hexagonal structure with preferential growth in [111] and [002] directions respectively. It is determined that the coupling in this heterojunction is compatible with a mismatch less 1 % due texture in each layer which implies a low number of defects. An electrical characterisation with an oscilloscope and signal generator was carried out to obtain the time-response signals and current-voltage (I-V) curves where no degradation is detected when changing from a range of frequencies (100 Hz – 1 MHz). An equivalent circuit is proposed to explain the effects in the interface. Finally, the MnO/ZnO:Zn heterojunction delivers states that are stable, repeatable, and reproducible and it demonstrates how the interaction of the materials can be used in adaptive device applications applying frequencies and internal states as to create new and innovative design schematics, reducing the numbers of components/connections in a system for future sustainable electronics.

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“…However, LIBs are still suffering from high battery costs and poor safety and are not suitable for high-current charging and discharging of existing power tools [7][8][9]. Recently, aqueous zinc-ion batteries (ZIBs) have emerged as one of the most attractive candidates for rechargeable metal-ion batteries [10,11]. Firstly, Zn metal is abundant and environmentally friendly, which is conducive to low-cost and large-scale applications.…”

Section: Introductionmentioning

confidence: 99%

A Self-Growing 3D Porous Sn Protective Layer Enhanced Zn Anode

Kong,

Zhang,

et al. 2023

Batteries

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Aqueous zinc-ion batteries (ZIBs) have received much attention because of their high safety, low pollution, and satisfactory energy density (840 mAh g−1), which is important for the research of new energy storage devices. However, problems such as short cell cycle life and low coulombic efficiency (CE) of zinc (Zn) anodes due to disorderly growth of Zn dendrites and side reactions of hydrogen corrosion have delayed the practical application of ZIBs. In this work, a new “self-growth” method is proposed to build a robust and homogeneous three-dimensional (3D) nanoporous structure of tin (Sn)-coated Zn anodes (ZSN) in just 10 min by a simple and fast reaction, which can largely raise the surface area of the electrode plate. The ZSN not only provides abundant Zn nucleation sites, but also reduces the corrosion current, thus alleviating the self-corrosion of the electrolyte, reducing the occurrence of hydrogen precipitation side reactions, and effectively inhibiting the growth of Zn dendrites during cycling. Thus, a symmetric cell with a ZSN anode can be stabilized with very low voltage hysteresis (30 mV) for 480 h of stable plating/stripping cycles and can operate well for 200 h even at high current densities of 10 mA cm−2. Supercapacitors and button cells were assembled, respectively, to verify the performance of ZSN electrodes in different energy storage tools. The ZSN||AC supercapacitor exhibited superior capacity (75 mAh g−1) and high reversibility (98% coulombic efficiency) at a current density of 2 A g−1. With a MnVO (MVO) electrode as the cathode, the ZSN||MVO full cell presents excellent cycling stability with a capacity retention of 95.4% after 500 cycles at 2 A g−1, which far exceeds that of the bare Zn cell.

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Recycling of Zinc−Carbon Batteries into MnO/ZnO/C to Fabricate Sustainable Cathodes for Rechargeable Zinc‐Ion Batteries

Cited by 16 publications

References 57 publications

MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

A Self-Growing 3D Porous Sn Protective Layer Enhanced Zn Anode

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