MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems

Abstract

In the last years, advances in materials engineering based on adaptive electronics have found a new paradigm to optimize drawbacks in signal processing. A two-layer MnO/ZnO:Zn heterostructure envisioned for frequency adaptive electronic signal processing is synthesized by sputtering where the use of internal states allows reconfigurability to obtain new operating modes at different frequency input signals. An X-Ray Diffraction (XRD) is performed on each layer, MnO:Mn had a cubic and ZnO:Zn a hexagonal structure with preferential growth in [111] and [002] directions respectively. It is determined that the coupling in this heterojunction is compatible with a mismatch less 1 % due texture in each layer which implies a low number of defects. An electrical characterisation with an oscilloscope and signal generator was carried out to obtain the time-response signals and current-voltage (I-V) curves where no degradation is detected when changing from a range of frequencies (100 Hz – 1 MHz). An equivalent circuit is proposed to explain the effects in the interface. Finally, the MnO/ZnO:Zn heterojunction delivers states that are stable, repeatable, and reproducible and it demonstrates how the interaction of the materials can be used in adaptive device applications applying frequencies and internal states as to create new and innovative design schematics, reducing the numbers of components/connections in a system for future sustainable electronics.