Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Huh, Jin Woo; Huang, Yun; Kim, Dong Chul; Munshi, A. Mazid; Dheeraj, Dasa L.; Kauko, Hanne; Helvoort, Antonius T. J. van; Lee, Sang Wook; Fimland, B. O.; Weman, H.

doi:10.1021/acs.nanolett.5b00089

Cited by 63 publications

(117 citation statements)

References 46 publications

(79 reference statements)

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“…Among all semiconducting NWs, III–V semiconductor NWs are promising candidates for photodetectors because of their high absorption coefficient and wide tunable bandgaps . Photodetectors based on III–V semiconductor NWs have been fabricated in different configurations such as core–shell nanostructures, alloys, and heterostructures . Among all III–V NWs, gallium arsenide (GaAs) NWs have gained immense attention for detection application over recent years because of their high light‐to‐electricity conversion efficiency, moderate direct bandgap (1.42 eV), and high compatibility with Si technology, which in turn make them suitable for various outstanding optoelectronic applications like solar cells, photodetectors, p‐n diodes, and field effect transistors …”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

“…These NWs are also not well‐matched with the complementary metal–oxide–semiconductor (CMOS) engineering standards because of the inclusion of defect states . Therefore, self‐induced growth (self‐catalyzed growth) techniques to synthesize the NWs have become intensively vital because they outmaneuver unintentional incorporation of foreign impurities which enhances the optoelectronic features of NWs …”

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

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High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan

Zhang

Tang

et al. 2018

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Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and nonradiative recombination centers. Here, self-catalyzed p-type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photoresponsivity of 1.45 × 10 A W and excellent specific detectivity (D*) up to 1.48 × 10 Jones for a low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.

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Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

Section: Comparison Of Responsivity Optical Gain and Detectivity Ofmentioning

confidence: 99%

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Hassan

Zhang

Tang

et al. 2018

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“…Even though there is an extensive body of literature on Au-catalyzed and Au-free axial GaAsSb NWs 12–23 , the majority of the work on self-assisted axial GaAsSb NWs is mainly focused on structural and electronic characterization. Despite the fact that in the axial configuration an Sb composition as high as 93 at.% has been reported 9 , Sb compositions beyond 30 at.% have a detrimental impact on NW morphology and characteristics, namely uneven growth, tapered morphology, multiple facets, compositional gradient, thick parasitic islands of GaAsSb and poor PL emission 9, 12, 19–21 .…”

Section: Introductionmentioning

confidence: 98%

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Ahmad

Karim

Hafiz

et al. 2017

Sci Rep

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Self-catalyzed growth of axial GaAs1−xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 µm at room temperature.

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“…Low-dimensional antimonide alloy structures were then grown as the MBE technology matured. The controllable growth of GaSb-based NWs has already been realized by some research groups [98]. The optical properties of NWs are similar to those of thin films, but the surface states in NWs are comparatively enormous; this can be attributed to their high surface-to-volume ratios.…”

Section: Discussionmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Cited by 63 publications

References 46 publications

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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