2016
DOI: 10.1016/j.carbon.2016.02.038
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Rectifying electrical contacts to n-type 6H–SiC formed from energetically deposited carbon

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Cited by 22 publications
(21 citation statements)
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“…Voltage dependence observed in the reverse bias current of C/Si diodes has been attributed to BL by image forces . This behavior is also seen in the reverse bias characteristics of our devices . The current does not saturate as predicted for an ideal junction but increases with increased reverse bias.…”
Section: ‐R ‐S Diode Structuresupporting
confidence: 79%
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“…Voltage dependence observed in the reverse bias current of C/Si diodes has been attributed to BL by image forces . This behavior is also seen in the reverse bias characteristics of our devices . The current does not saturate as predicted for an ideal junction but increases with increased reverse bias.…”
Section: ‐R ‐S Diode Structuresupporting
confidence: 79%
“…Incorporating this value has a pronounced effect on the I‐V characteristics of the junction model for the forward bias region ≥0.5 V, when compared with a junction with no interface resistance. This resistance is attributed to an oxide‐free carbon/Si mixed interface layer of approximately 3‐nm thickness, as observed by cross‐sectional transmission electron microscopy performed on similarly deposited C/6H‐SiC diodes …”
Section: Resultsmentioning
confidence: 70%
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