Rectifying electrical contacts to n-type 6H–SiC formed from energetically deposited carbon

Kracica, M.; Mayes, Edwin L. H.; Tran, Hiep N.; Holland, Anthony S.; McCulloch, D. G.; Partridge, J. G.

doi:10.1016/j.carbon.2016.02.038

Cited by 22 publications

(21 citation statements)

References 25 publications

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“…Voltage dependence observed in the reverse bias current of C/Si diodes has been attributed to BL by image forces . This behavior is also seen in the reverse bias characteristics of our devices . The current does not saturate as predicted for an ideal junction but increases with increased reverse bias.…”

Section: ‐R ‐S Diode Structuresupporting

confidence: 79%

“…Incorporating this value has a pronounced effect on the I‐V characteristics of the junction model for the forward bias region ≥0.5 V, when compared with a junction with no interface resistance. This resistance is attributed to an oxide‐free carbon/Si mixed interface layer of approximately 3‐nm thickness, as observed by cross‐sectional transmission electron microscopy performed on similarly deposited C/6H‐SiC diodes …”

Section: Resultsmentioning

confidence: 70%

“…This difference can be included in TCAD by assigning an appropriately scaled resistance R i to each boundary node i with an associated contact length d i at the MS interface, as shown in Figure . Thus, unlike the lumped resistance model where ϕ F is constant everywhere in the contact, an electrostatic potential (or Fermi potential) ϕ Fi is associated with each node i of the MS interface . Incorporating this model in the simulation produces an even distribution of the current over the interface …”

Section: ‐R ‐S Diode Structurementioning

confidence: 99%

“…Carbonaceous materials offer tunable electrical properties, thermal and chemical stability, and flexibility so are increasingly used in electronics . We have shown that by depositing C from an energetic plasma, highly rectifying graphitic (semimetallic) contacts can be made on p‐type Si and n‐type 6H‐SiC . These contacts are formed at sufficiently low temperatures to be compatible with photolithography, enabling accurate control of device dimensions/locations.…”

Section: Introductionmentioning

confidence: 99%

“…Measurements have shown that the deposition energy influences the electrical characteristics of these junctions . In particular, increased RR and decreased series resistance are observed in contacts with higher graphitic content (sp 2 bonding fraction) that are deposited from C plasmas at higher energies.…”

Section: Introductionmentioning

confidence: 99%

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Simulation of graphitic contacts to p‐type Si using a metal‐resistor‐semiconductor (M‐R‐S) model implemented in TCAD

Alnassar

Luong

Tran

et al. 2017

Int J Numerical Modelling

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In this paper, we describe simulations of highly rectifying carbon/p‐Si junctions using Sentaurus TCAD from Synopsys. 2‐D and 3‐D models were constructed and optimized to fit I‐V characteristics measured from these junctions. The TCAD models included a resistive interface layer, previously observed experimentally. From the model, the interface resistance was determined to be 0.04 Ω·cm2, and the work function of the graphitic contacts was determined to be 4.43 eV. The latter is the work function at the interface, which cannot be measured experimentally. Schottky barrier lowering was implemented in the model to provide agreement with the measurements. The modeling provided information that could not be obtained from measurements and suggested a path to improved devices.

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Section: ‐R ‐S Diode Structuresupporting

confidence: 79%

Section: Resultsmentioning

confidence: 70%

Section: ‐R ‐S Diode Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Simulation of graphitic contacts to p‐type Si using a metal‐resistor‐semiconductor (M‐R‐S) model implemented in TCAD

Alnassar

Luong

Tran

et al. 2017

Int J Numerical Modelling

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Graphite/SiC junctions and their electrical characteristics

Yatskiv

Grym

2017

Phys. Status Solidi A

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284 680 222 Current-voltage characteristics of rectifying graphite/SiC junctions are investigated in a wide temperature range. The main parameters of the diodes, the ideality factor, and the Schottky barrier height show strong temperature dependence.Such behavior is interpreted on the basis of standard thermionic emission theory assuming Gaussian distribution of the barrier heights due to inhomogeneity at the graphite/SiC interface.

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