Rectifying Contacts on CdSe Films

Prakash, Om; Muralidhara, K N; Ravindra, Kumar

doi:10.1080/02564602.1990.11438651

Cited by 6 publications

(8 citation statements)

References 10 publications

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“…The equation for I 2 is analogous. Here, A ** is the effective Richardson constant that is assumed to be 15.6 A cm –2 K –1 for both Au–CdSe and PEDOT:PSS–CdSe Schottky barriers (Table ). ϕ B1 is the barrier height for electrons at the Au−CdSe interface, whereas ϕ B2 , used in the analogous expression for I 2 , applies to the PEDOT:PSS–CdSe contact (Figure d).…”

Section: Resultsmentioning

confidence: 99%

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Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires

Qiao¹,

Ogata²,

Jha³

et al. 2018

ACS Appl. Mater. Interfaces

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A wet chemical process involving two electrodeposition steps followed by a solution casting step, the "EESC" process, is described for the fabrication of electroluminescent, radial junction wires. EESC is demonstrated by assembling three well-studied nanocrystalline (or amorphous) materials: Au, CdSe, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The tri-layered device architecture produced by EESC minimizes the influence of an electrically resistive CdSe emitter layer by using a highly conductive gold nanowire that serves as both a current collector and a negative electrode. Hole injection, at a high barrier CdSe-PEDOT:PSS interface (ϕ ≈ 1.1 V), is facilitated by a contact area that is 1.9-4.7-fold larger than the complimentary gold-CdSe electron-injecting contact (ϕ ≈ 0.6 V), contributing to low-voltage thresholds (1.4-1.7 V) for electroluminescence (EL) emission. Au@CdSe@PEDOT:PSS wire EL emitters are 25 μm in length, amongst the longest so far demonstrated to our knowledge, but the EESC process is scalable to nanowires of any length, limited only by the length of the central gold nanowire that serves as a template for the fabrication process. Radial carrier transport within these multishell wires conforms to the back-to-back diode model.

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Section: Resultsmentioning

confidence: 99%

“… a A ** = effective Richardson constant for CdSe b ϕ B1 = Schottky barrier height for Au–CdSe contact. c ϕ B2 = Schottky barrier height for PEDOT:PSS–CdSe contact. d n 1 = ideality factor for Au–CdSe contact. e n 2 = ideality factor for PEDOT:PSS–CdSe contact.…”

Section: Resultsmentioning

confidence: 99%

Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires

Qiao¹,

Ogata²,

Jha³

et al. 2018

ACS Appl. Mater. Interfaces

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“…Here A ** is the effective Richardson constant. For a Au–CdSe Schottky barrier, A ** = 15.6 A cm –2 K –1 ; ϕ B1 and ϕ B2 are the Schottky barrier heights of the Au–CdSe and Ni–CdSe contacts, respectively, and n 1 and n 2 are the two ideality factors for these junctions. Equation does an excellent job of fitting our experimental I – V curves for all five tn-ELJs and w CdSe values (Figure a).…”

Section: Resultsmentioning

confidence: 99%

“… a A ** = Richardson constant b ϕ B1 = Schottky barrier height for Ni–CdSe contact. c ϕ B2 = Schottky barrier height for Au–CdSe contact. d n 1 = ideality factor for Ni–CdSe contact. e n 2 = ideality factor for Au–CdSe contact. …”

Section: Resultsmentioning

confidence: 99%

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Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Qiao

Dutta

et al. 2016

ACS Nano

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The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) is described, and the electroluminescence (EL) properties of these devices are characterized. The lithographically patterned nanowire electrodeposition process is first used to prepare long (millimeters), linear, nanocrystalline CdSe nanowires on glass. The thickness of these nanowires along the emission axis is 60 nm, and the width, wCdSe, along the electrical axis is adjustable from 100 to 450 nm. Ten pairs of nickel-gold electrical contacts are then positioned along the axis of this nanowire using lithographically directed electrodeposition. The resulting linear array of nickel-CdSe-gold junctions produces EL with an external quantum efficiency, EQE, and threshold voltage, Vth, that depend sensitively on wCdSe. EQE increases with increasing electric field and also with increasing wCdSe, and Vth also increases with wCdSe and, therefore, the electrical resistance of the tn-ELJs. Vth down to 1.8(±0.2) V (for wCdSe ≈ 100 nm) and EQE of 5.5(±0.5) × 10(-5) (for wCdSe ≈ 450 nm) are obtained. tn-ELJs produce a broad EL emission envelope, spanning the wavelength range from 600 to 960 nm.

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Temperature-dependent barrier height in CdSe Schottky diode

Tripathi

2010

J Mater Sci

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Rectifying Contacts on CdSe Films

Cited by 6 publications

References 10 publications

Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires

Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires

Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Temperature-dependent barrier height in CdSe Schottky diode

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