Recrystallization of Thin Gold Films: Influence on Their Electrical Properties

Chauvineau, J.P.; Croce, Pietro; Devant, G.; Verhaeghe, M. F.

doi:10.1116/1.1315758

Cited by 29 publications

(8 citation statements)

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“…The growth of (1 1 1) textured Au layers, and Au/Co/Au trilayers, has long been studied with different scientific goals in mind. For example, Croce et al [8,9] and Chavineau et al [10] pioneered the development of the (1 1 1) texture upon annealing Au thin films deposited on amorphous substrates. The growth and study of Au/Co/Au trilayers became of interest during the 1980s and 1990s due to the observation of interfacial magnetic anisotropies, giant magneto-resistance and novel MO phenomena.…”

Section: Introductionmentioning

confidence: 99%

Optimizing the planar structure of (1 1 1) Au/Co/Au trilayers

Kumah¹,

Cebollada²,

Clavero³

et al. 2007

J. Phys. D: Appl. Phys.

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Au/Co/Au trilayers are interesting for a range of applications which exploit their unusual optical and electronic transport behaviour in a magnetic field. Here we present a comprehensive structural and morphological study of a series of trilayers with 0-7 nm Co layer thickness fabricated on glass by ultrahigh vacuum vapour deposition. We use a combination of in situ electron diffraction, atomic force microscopy and x-ray scattering to determine the optimum deposition conditions for highly textured, flat and continuous layered structures. The 16 nm Au-on-glass buffer layer, deposited at ambient temperature, is found to develop a smooth (1 1 1) texture on annealing at 350 • C for 10 min. Subsequent growth of the Co layer at 150 • C produces a (1 1 1) textured film with lateral grain size of ∼150 nm in the 7 nm-thick Co layer. A simultaneous in-plane and out-of-plane Co lattice expansion is observed for the thinnest Co layers, converging to bulk values for the thickest films. The roughness of the Co layer is similar to that of the Au buffer layer, indicative of conformal growth. The 6 nm Au capping layer smoothens the trilayer surface, resulting in a surface roughness independent of the Co layer thickness.

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Section: Introductionmentioning

confidence: 99%

Optimizing the planar structure of (1 1 1) Au/Co/Au trilayers

Kumah¹,

Cebollada²,

Clavero³

et al. 2007

J. Phys. D: Appl. Phys.

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“…Similarly the effect of thermal stresses is not yet known. However, annealing of Au at 250~ for 3 hr during which substantial grain growth and recrystallization might be expected (12) before Pd overlay deposition did not make any noticeable change in Si dissolution pattern.…”

Section: Discussionmentioning

confidence: 90%

Interface Effects in the Dissolution of Silicon into Thin Gold Films

Sankur

McCaldin

1975

J. Electrochem. Soc.

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The dissolution of crystalline Si and amorphous Si substrates into thin films of evaporated Au was studied with an electron microprobe and scanning electron microscopy. The dissolution pattern was found to be nonuniform along the plane of the surface and dependent on the crystalline orientation of the Si substrate. The dissolution is greatly facilitated when a very thin layer of Pd is evaporated between the Si substrate and the Au film.

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“…It has been shown that evaporated gold thin films on amorphous substrates recrystallize at temperatures as low as 75 °C and the maximum recrystallization rate occurs at 120 °C. 100 In the case of a platinum thin film (100 nm thick) on a titanium film (10 nm), a similar phenomenon (formation of pinholes and eventual formation of a crystalline network) occurs at 700 °C. 101…”

Section: Ptl/cl Interfacementioning

confidence: 93%

“…11(b) shows and gold coating corrosion is not clear. It has been shown that evaporated gold thin lms on amorphous substrates recrystallize at temperatures as low as 75 C and the maximum recrystallization rate occurs at 120 C. 100 In the case of a platinum thin lm (100 nm thick) on a titanium lm (10 nm), a similar phenomenon (formation of pinholes and eventual formation of a crystalline network) occurs at 700 C. 101 At the contact area portion of the PTL/CL interface, titanium oxide lm is in contact with the electronically conductive catalyst (iridium oxide) particles. The electronic conductivity of IrO x , which is the most commonly used anode, electrocatalyst highly depends on anodic potential which affects its oxidation state.…”

Section: Reviewmentioning

confidence: 99%