Recrystallization of Si on amorphous substrates by doughnut-shaped cw Ar laser beam

Kawamura, S; Sakurai, J.; Nakano, M.; Takagi, Mikio

doi:10.1063/1.93114

Cited by 72 publications

(25 citation statements)

References 3 publications

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“…Therefore, as the pulse number or pulse energy increases, the NIR absorptance decreases after reaching a maximum value. The silicon amorphous structure goes back to silicon crystalline structure under the influence of laser irradiation [15][16][17][18][19][20][21][22][23][24][25][26]. The silicon structure can be changed back and forth between crystalline and amorphous by controlling the experimental conditions.…”

Section: Resultsmentioning

confidence: 99%

“…On the one hand, amorphous silicon-related papers of laser irradiation mainly concentrated on the application of the laser-annealing effect, i.e., amorphous silicon became silicon crystalline or micro/nanostructured silicon for better optoelectronics applications [15][16][17][18][19][20][21][22][23][24][25][26]. On the other hand, amorphous silicon and lattice distortions could be formed with the femtosecond laser irradiation [27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

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Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

Zhu

2015

International Journal of Smart and Nano Materials

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The near-infrared (NIR) absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energy, pulse number, and pulse duration. The Raman spectroscopy analysis shows that after the laser irradiation, the silicon surface consists of silicon nanostructure and amorphous silicon. The femtosecond laser irradiation leads to the formation of a composite of nanocrystalline, amorphous, and the crystal silicon substrate surface with microstructures. The composite has an optical absorption enhancement at visible wavelengths as well as at NIR wavelength. The composite may be useful for an NIR detector, for example, for gas sensing because of its large surface area.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

Zhu

2015

International Journal of Smart and Nano Materials

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“…For solar cells, grains larger than the film thickness are required, that is grains above 10 Am in size. This can be achieved by a cw laser zone melting process operating at a wavelength in the visible range [4]. By optimizing the process parameters such as beam cross section and scanning rate areas with crystallites even larger than 100 Am have been prepared [5].…”

Section: Introductionmentioning

confidence: 99%

Laser crystallized multicrystalline silicon thin films on glass

Andrä¹,

Bergmann²,

Falk³

2005

Thin Solid Films

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“…Although narrow grains longer than 600 mm were obtained using a doughnut-shaped cw Ar laser beam, big grain growth over large areas was restricted [17]. Moreover, it was reported that a uniform poly-silicon film with large (B2 mm) aligned grains was formed using a technique based on a two-pass excimer laser re-crystallization process [18].…”

Section: Introductionmentioning

confidence: 98%