Controlled growth of high-quality poly-silicon thin films with huge grains on glass substrates using an excimer laser

Zhang, Fengming; Liu, Xingchong; Ni, Gang; Du, Youwei

doi:10.1016/j.jcrysgro.2003.07.035

Cited by 13 publications

(4 citation statements)

References 23 publications

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“…Polycrystalline silicon (poly-Si) film is a promising material for solar cell application because its carrier mobility is 10 to 100 times larger than that of a hydrogenated amorphous silicon (a-Si:H) film [1]. Three methods are currently used for manufacturing poly-Si film on glass: catalytic chemical vapor deposition [2], excimer laser annealing (ELA) [3], and metal-induced crystallization (MIC) [4][5][6][7][8][9][10]. Aluminum-induced crystallization (AIC) induces the crystallization of a-Si below the eutectic temperature (577 ∘ C) of Al and Si.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

Chu

Weng

Chen

2013

International Journal of Photoenergy

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The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

Chu

Weng

Chen

2013

International Journal of Photoenergy

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“…Therefore, various crystallization technologies have been developed to transform amorphous silicon (a-Si) into poly-Si, including excimer laser crystallization (ELC), where an a-Si thin film irradiated under nanosecond-pulse excimer lasers is transformed into poly-Si without damaging the substrate. 10 ELC suffered from some issues, however, such as lack of poly-Si grain uniformity and high manufacturing cost. 11 Solid-phase crystallization (SPC) is another crystallization * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

Lee¹,

Yang²,

Hu³

et al. 2011

J. Nanosci. Nanotech.

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The effects of active layer thickness and device dimensions on nanometal-induced crystallization (nano-MIC) were studied to determine the electrical characteristics of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with bottom-gate structures. The nano-MIC poly-Si film was obtained via deposition of a 0.4-nm-thick Ni film on the amorphous silicon layer and subsequent annealing at 550 degrees C for 0.5 to 8 h. The EDS revealed a approximately 0.1% Ni concentration in the poly-Si film. The cross-sectional TEM image shows the vertical-grain growth mechanism, where the bottom side of the grain exhibits a larger crytalline area than the top side. Therefore, the field effect mobility of the bottom-gate poly-Si TFTs increases with increased active-amorphous-silicon (a-Si) thickness. Furthermore, the mobility increases when the device dimensions are scaled down. A mechanism for explaining such phenomenon in relation to the nano-MIC bottom-gate poly-Si TFTs was also proposed.

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“…Hence, the high-performance polycrystalline silicon (poly-Si) technology is an alternative to the a-Si technology. [9][10][11][12] In order to produce high-quality poly-Si films on glass substrates, the excimer laser crystallization [13][14][15] (ELC) method is adopted generally. However, laser-annealed crystallized thin films possess high surface roughness.…”

Section: Introductionmentioning

confidence: 99%

Highly Uniform Polycrystalline Silicon Thin Films Fabricated by Metal Plate Energy-Assisted Agent Method

Lin

Chen

Lee

et al. 2008

jjap

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We investigate two randomly frusuated ID or quasi-ID Ising systems with diluted disorder. namely the ferromagnetic chain in a random field and the ladder spin glass. We present an analytical study of the susceptibilities (linear x . nonlinear x g , and higher orders), which characterize the response to a uniform external field at finite temperature. Both models admit a continuum description in the scaling regime of low tempemre and low impurity concentration, where the susceptibilities obey power laws, similarly to usual crihcal phenomena, albeit unlike the man-field theory of spin glasses. We obtain explicit expressions for the scaling functions of x and x 3 , and an estimate for the essential Lee-Yang singuluty. $ 4379 4380The coefficients xZ-, are the susceptibilities of the model. The linear suscepribility x , which characterizes the linear response of the system, can be expressed as the following sum of the connected two-point correlation function in zero field: E Amic nnd J M Luck whereas the nonlinenr susceptibility x3 can be expressed as a sum of the four-point correlations of the spins, and so on for the higher-order susceptibilities xu-, .Exactly solvable one-dimensional (ID) disordered magnetic systems provide interesting test cases. In spite of the absence of a finite-temperature phase transition, frustration is responsible for the existence of numerous almost-degenerate states, yielding a rich low-temperature behaviour in thermodynamical quantities and correlation functions. The ferromagnetic king chain in a quenched random magnetic field is certainly the simplest of these model systems. It has been the subject of many investigations, based on the observation that its free energy is the Lyapunov exponent of an infinite product of random 2 x 2 transfer matrices (see [4,5] for reviews). Its thermodynamical properties at finite temperature are known exactly only for some classes of distributions of the quenched random fields, either discrete [6] or continuous [7-91. Some results are also available for more general distributions of disorder, either at zero temperature [lo], or in the weakdisorder regime [11][12][13]. The two-point correlation function and the linear susceptibility x are only known in a limited number of cases [4,6,14], whereas virtually nothing is known about higher-order correlations and susceptibilities. The converse situation of an king chain with random exchange couplings is not frustrated, but the ladder geometry, i.e. two chains coupled by transversal exchange couplings, is frustrated, and thus provides an interesting spin-glass model [IO. 151.The purpose of the present article is a detailed study of the higher-order susceptibilities of ID disordered magnetic models, and particularly a comparison of their scaling behaviour with the cases of common critical phenomena and of the mean-field theory of spin glasses. The analytical investigation of the susceptibilities is performed on the ID disordered king models mentioned above, namely the ferromagnetic chain in a random magnetic fiel...

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Controlled growth of high-quality poly-silicon thin films with huge grains on glass substrates using an excimer laser

Cited by 13 publications

References 23 publications

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

Highly Uniform Polycrystalline Silicon Thin Films Fabricated by Metal Plate Energy-Assisted Agent Method

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