Recording of cell action potentials with AlGaN∕GaN field-effect transistors

Abstract

An AlGaN / GaN electrolyte gate field-effect transistor array for the detection of electrical cell signals has been realized. The low-frequency noise power spectral density of these devices exhibits a 1/ f characteristic with a dimensionless Hooge parameter of 5 ϫ 10 −3 . The equivalent gate-input noise under operation conditions has a peak-to-peak amplitude of 15 V, one order of magnitude smaller than for common silicon-based devices used for extracellular recordings. Extracellular action potentials from a confluent layer of rat heart muscle cells cultivated directly on the nonmetallized gate surface were recorded with a signal amplitude of 75 V and a signal-to-noise ratio of 5:1.

Bio FEDs (Field‐Effect Devices): State‐of‐the‐Art and New Directions

“…As one example, a bioelectronic device (array of 16 FETs) has been adapted for recording effects of different drugs on cardiac myocytes [58]. In addition, a 16-channel backside contacted FET array [59], a depletion-mode floating-gate FET fabricated by 0.5 mm CMOS technology [60], a large array (16 Â 16) of floating-gate FETs [61] and AlGaN/GaN FETs with a high signal-to-noise ratio [62] ; here, the relationship between the membrane potential and the influx/efflux of ions under an external stimulation and drug treatment has been investigated [63]. Generally, the advantage of cell-based ISFET biosensors over conventional patch-clamp technique is the possibility of real-time, non-invasive and long-term monitoring of the state of living cells.…”

Graphene Transistors for Bioelectronics

“…Although graphene technology is still in its infancy, graphene-based FETs already offer advantages when compared to the other competing technologies. In terms of biocompatibility, graphene exhibit a similar performance than diamond [22] and AlGaN/GaN, [23] whereas silicon devices require additional encapsulation layers to improve their stability. [25] Some materials, such as carbon nanotubes, also allow the fabrication of sensitive solution-gated transistors, [26] but their biocompatibility is still controversial.…”

High-transconductance graphene solution-gated field effect transistors

“…The nitride-based devices were fabricated from GaN/AlGaN/ GaN heterostructures. 15 Diamond SGFETs were prepared using the surface conductivity of hydrogenated single crystalline diamond. 16 Fig.…”