Record high characteristic temperature (To = 122 K) of 1.55 [micro sign]m strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier

Ohnoki, N.; Okazaki, Gen; Koyama, Fumio; Iga, Kenichi

doi:10.1049/el:19990031

Cited by 31 publications

(7 citation statements)

References 4 publications

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“…Lower T 1 values can imply a significant carrier leakage out of the QW active region, as investigated by a prior study [26]. It is noted that the T 0 values, obtained here, are generally small due to inherently weak carrier confinement at the interface between AlInGaAs SCH and InP cladding layer as well as that of AlInGaAs SCH and InGaAs QW [27][28] and due to Auger recombination [29]. Therefore, together with optimization in the heterostructure, T 0 and T 1 can be somewhat improved [30].…”

Section: Resultssupporting

confidence: 51%

Electrically injected 164µm emitting In₀₆₅Ga₀₃₅As 3-QW laser diodes grown on mismatched substrates by MOVPE

et al. 2019

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We report the characteristics of the strained In 0.65 Ga 0.35 As triple quantum well (QW) diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched substrates such as GaAs or Si, by utilizing InP metamorphic buffer layers (MBLs) in conjunction with InAs nanostructure-based dislocation filters. As the lattice-mismatch between the substrate and InP MBL increases, higher threshold current densities and lower slope efficiencies were observed, together with higher temperature sensitivities for the threshold current and slope efficiency. Structural analysis performed by both high-resolution X-ray diffraction (HR-XRD) and transmission electron microscopy indicates graded and/or rougher QW interfaces within the active region grown on the mismatched substrate, which accounts for the observed devices characteristics.

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Section: Resultssupporting

confidence: 51%

Electrically injected 164µm emitting In₀₆₅Ga₀₃₅As 3-QW laser diodes grown on mismatched substrates by MOVPE

et al. 2019

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“…24) The crystal growth of AlAs/GaAs DBR on an InP-based active layer has also been demonstrated. 25) Using this system, the first monolithic VCSEL demonstrating roomtemperature CW operation in the long-wavelength region was fabricated.…”

Section: Algainas/algainas and Other-materials Vcselmentioning

confidence: 99%

Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution

Iga

2008

jjap

215

112

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The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local-area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultraparallel data transfer in equipment and computer systems. In this paper, we will review its physics and the progress of technology covering the spectral band from the infrared to the ultraviolet, by featuring materials, fabrication technology, and performances such as threshold, output power, polarization, modulation and reliability. Lastly, we will touch on its future prospects.

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“…InGaAs/AlGaInAs multiple QW lasers. 6,8,9 In conclusion, we have grown 1.55 m active regions, without the aid of multiple cells for each group III source or changing the cell temperatures during the growth, by using SMS of InGaAs/InAs/InGaAs and SMS of InGaAs/AlInAs for QWs and barriers, respectively. The versatility of the technique was proven by growing 1.55 m active region with two kinds of compressively strained QWs.…”

Section: Had Used Submonolayermentioning

confidence: 99%

Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices

Reddy

Huntington

Buell

et al. 2002

Applied Physics Letters

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Submonolayer superlattices (SMS) of Ga0.47In0.53As/InAs/Ga0.47In0.52As and Ga0.47In0.53As/Al0.48In0.52As were used for the growth of strained quantum wells (QWs) and lattice-matched barriers, respectively, in the 1.55 μm active region. QWs grown with different compressive strains show excellent room-temperature photoluminescence, demonstrating the versatility of this technique. State-of-the-art current thresholds are reported for the broad-area lasers fabricated using the SMS active region.

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Record high characteristic temperature (To = 122 K) of 1.55 [micro sign]m strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier

Cited by 31 publications

References 4 publications

Electrically injected 164µm emitting In₀₆₅Ga₀₃₅As 3-QW laser diodes grown on mismatched substrates by MOVPE

Electrically injected 164µm emitting In₀₆₅Ga₀₃₅As 3-QW laser diodes grown on mismatched substrates by MOVPE

Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution

Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices

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Record high characteristic temperature (To = 122 K) of 1.55 [micro sign]m strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier

Cited by 31 publications

References 4 publications

Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution

Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices

Contact Info

Product

Resources

About

Electrically injected 164µm emitting In₀₆₅Ga₀₃₅As 3-QW laser diodes grown on mismatched substrates by MOVPE

Electrically injected 164µm emitting In₀₆₅Ga₀₃₅As 3-QW laser diodes grown on mismatched substrates by MOVPE