Reconstructions and phase transition of clean Ge(110)

Mullet, Cory; Chiang, S.

doi:10.1016/j.susc.2013.10.023

Cited by 24 publications

(32 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1(a,b)] and LEED images [Fig. 1(f)].According to previous studies this surface can be described as a faceted surface with {17 15 1} facets and c(8 × 10) reconstruction on the steps[28][29][30][31]. Deposition of carbon on Ge(110) at T = 870 • C and subsequent cooling of the sample to room temperature lifts the previously observed reconstruction, however, producing an ordered underlying Ge surface as can be seen from the respective STM and LEED images [Fig.…”

mentioning

confidence: 87%

Growth and electronic structure of graphene on semiconducting Ge(110)

Tesch

Voloshina

Fonin

et al. 2017

Carbon

View full text Add to dashboard Cite

The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphenesemiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.

show abstract

mentioning

confidence: 87%

Growth and electronic structure of graphene on semiconducting Ge(110)

Tesch

Voloshina

Fonin

et al. 2017

Carbon

View full text Add to dashboard Cite

show abstract

“…These (8x2) have been reported earlier in ref. [14]. In the insets of Figure 1 zoom-ins of the different phases are displayed.…”

Section: Resultsmentioning

confidence: 99%

Electronic and energetic properties of Ge(110) pentagons

Bampoulis¹,

Acun²,

Zhang³

et al. 2014

Surface Science

View full text Add to dashboard Cite

The electronic and energetic properties of the elementary building block, i.e. a five-membered atom ring (pentagon), of the Ge(110) surface was studied by scanning tunneling microscopy and spectroscopy at room temperature. The Ge(110) surface is composed of three types of domains: two ordered domains ((16x2) and c(8x10)) and a disordered domain. The elementary building block of all three domains is a pentagon. Scanning tunneling spectra recorded on the (16x2), c(8x10) and disordered domains are very similar and reveal three well-defined electronic states. Two electronic states are located 1.1 eV and 0.3 eV below the Fermi level respectively, whereas the third electronic state is located 0.4 eV above the Fermi level. The electronic states at -0.3 eV and 0.4 eV can be ascribed to the pentagons, whilst we tentatively assigned the electronic state at -1.1 eV to a Ge-Ge back bond or trough state. In addition, we have analyzed the straight [1-12] oriented step edges. From the kink density and kink-kink distance distributions we extracted the nearest neighbor interaction energy between the pentagons, which exhibit a strong preference to occur in twins, as well as the strain relaxation energy along the pentagon-twin chains.

show abstract

“…Considering that the (1 1 0) terraces in the (16×2) reconstruction are relatively wide, the step-step interactions should be small and each step could be considered independently in the first approximation. Taking this note into account, the reconstructed and germanium surfaces [1,8,14,15,33,34]. Therefore, there is a tight structural relationship between the (17 15 1)−(2×1) and (1 1 0)−(16×2) surfaces.…”

mentioning

confidence: 99%

“…It is shown that the Si(47 35 7) surface shares the same building block. Our study closes the long-debated pentagon structures on (1 1 0) silicon and germanium surfaces.Over the past three decades, large efforts have been made to understand the atomic and electronic structure of (1 1 0) silicon and germanium surfaces using scanning tunneling microscopy (STM) and spectroscopy, photoelectron spectroscopy and first principles calculations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This indicates both the complexity of the task and its high scientific relevance.…”

mentioning

confidence: 99%

“…1(a)], only the (1 1 0) structure is still not understood, and, therefore, it is of signifcant academic interest as well.The common feature of all reconstructed (1 1 0) silicon and germanium surfaces is the presence of bright spots exhibiting pentagonal or tetragonal shapes (hereafter polygons) in high-resolution STM images depending on acquisition conditions [4,11]. When the Ge(1 1 0) surface is observed at an elevated temperature (above 430 • C), the polygons are closely packed and show no long range order [8,14,30]. However, when the temperature is lowered to about 380 • C the polygons begin to line up and their density is lowered, indicating the formation of the c(8×10) reconstruction.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Universal building block for (1 1 0)-family silicon and germanium surfaces

Жачук

Shklyaev

2019

Applied Surface Science

View full text Add to dashboard Cite

The universal building block which is an essential part of all atomic structures on (1 1 0) silicon and germanium surfaces and their vicinals is proposed by combining first-principles calculations and scanning tunneling microscopy (STM). The atomic models for the (1 1 0)−(16×2), (1 1 0)−c(8×10), (1 1 0) − (5 × 8) and (17 15 1) − (2 × 1) surface reconstructions are developed on the basis of the building block structure. The models exhibit very low surface energies and excellent agreements with bias-dependent STM images. It is shown that the Si(47 35 7) surface shares the same building block. Our study closes the long-debated pentagon structures on (1 1 0) silicon and germanium surfaces.Over the past three decades, large efforts have been made to understand the atomic and electronic structure of (1 1 0) silicon and germanium surfaces using scanning tunneling microscopy (STM) and spectroscopy, photoelectron spectroscopy and first principles calculations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This indicates both the complexity of the task and its high scientific relevance. One of the reasons for the persistent interest to these surfaces is their peculiar properties, such as high hole mobility in the devices fabricated on the Si(1 1 0) surface [21] and strong surface anisotropy. The second feature became especially atrractive due to the recent success in the formation of singledomain (16 × 2) reconstruction on the Si(1 1 0) surface [22,23]. This makes (1 1 0) surfaces very convenient substrates for the growth of one-dimensional objects, such as nanowires [24][25][26][27][28][29]. It is also worth noting that, among all low-index silicon and germanium surfaces, (1 0 0), (1 1 1) and (1 1 0) [ Fig. 1(a)], only the (1 1 0) structure is still not understood, and, therefore, it is of signifcant academic interest as well.The common feature of all reconstructed (1 1 0) silicon and germanium surfaces is the presence of bright spots exhibiting pentagonal or tetragonal shapes (hereafter polygons) in high-resolution STM images depending on acquisition conditions [4,11]. When the Ge(1 1 0) surface is observed at an elevated temperature (above 430 • C), the polygons are closely packed and show no long range order [8,14,30]. However, when the temperature is lowered to about 380 • C the polygons begin to line up and their density is lowered, indicating the formation of the c(8×10) reconstruction. A very long annealing at 380 • C converts the c(8 × 10) reconstruction into the (16 × 2) surface structure. Thus, the (16 × 2) reconstruction is equilibrium, while the c(8 × 10) surface structure is only a transient (metastable) structure of the Ge (1 1 0) surface. The structural transformations on the Si(1 1 0) surface are similar to those of the Ge (1 1 0) surface, but the transient structure is (5 × 8) [16]. The formation of polygons in varied experimental conditions at various temperatures is a strong indication of their exceptional stability owing to low formation energy values. Figure 1. (a) Unit stere...

show abstract

Reconstructions and phase transition of clean Ge(110)

Cited by 24 publications

References 18 publications

Growth and electronic structure of graphene on semiconducting Ge(110)

Growth and electronic structure of graphene on semiconducting Ge(110)

Electronic and energetic properties of Ge(110) pentagons

Universal building block for (1 1 0)-family silicon and germanium surfaces

Contact Info

Product

Resources

About