Reconstruction of Thermal Boundary Resistance and Intrinsic Thermal Conductivity of SiO2-GaN-Sapphire Structure

Wang, Zhaoliang; Yao, Gang; Sun, Mingman; Tang, Dawei

doi:10.1615/ihtc15.tpp.008213

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3, we report the thermal conductivities calculated with Eq. 2, using the literature value for the thermal boundary resistance, R a−SiO2/GaN K = 1.02 10 −7 m 2 K/W [32], as well as neglecting it, which corresponds to putting the parameter α to 0. It can be seen that the full EMA clearly fails in reproducing our results: indeed, the calculated thermal conductivity surprisingly decreases with the volume fraction rather than increasing, indicating that the interface resistance should dominate the behavior for such small nanoinclusions.…”

Section: Thermal Conductivity Versus Volume Fractionmentioning

confidence: 99%

Enhanced thermal conductivity in percolating nanocomposites: a molecular dynamics investigation

et al. 2018

View full text Add to dashboard Cite

In this work we present a molecular dynamics investigation of thermal transport in a silica-gallium nitride nanocomposite. A surprising enhancement of the thermal conductivity for crystalline volume fractions larger than 5% is found, which cannot be predicted by an effective medium approach, not even including percolation effects, the model systematically leading to an underestimation of the effective thermal conductivity. The behavior can instead be reproduced if an effective volume fraction twice larger than the real one is assumed, which translates in a percolation effect surprisingly stronger than the usual one. Such scenario can be understood in terms of a phonon tunneling between inclusions, enhanced by the iso-orientation of all particles. Indeed, if a misorientation is introduced, the thermal conductivity strongly decreases. We also show that a percolating nanocomposite clearly stand in a different position than other nanocomopsites, where thermal transport is domimnated by the interface scattering, and where parameters such as the interface density play a major role, differently from our case. * Konstantinos.Termentzidis@insa-lyon.fr

show abstract

Section: Thermal Conductivity Versus Volume Fractionmentioning

confidence: 99%

Enhanced thermal conductivity in percolating nanocomposites: a molecular dynamics investigation

et al. 2018

View full text Add to dashboard Cite

show abstract

“…For experimental methods, time-domain thermoreflectance method (TDTR) 18 and 3ω method 19 are commonly used to study the interfacial thermal transport at micro-nano scale. Lyeo et al measured the TBR across Pb/Si interface using TDTR 20 , Wang et al measured the TBR across SiO2/GaN interface using 3ω method 21 , and Kuzmik et al measured the TBR across GaN/Si interface with Micro-Raman method 22 .…”

Section: Introductionmentioning

confidence: 99%

Thermal boundary resistance measurement and analysis across SiC/SiO2 interface

Deng

Xiao

Yuan

et al. 2019

Applied Physics Letters

View full text Add to dashboard Cite

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO2 was characterized by using transmission electron microscopy and X-ray diffraction. The TBR is measured as 8.11×10 -8 m 2 K/W by 3ω method.Furthermore, the diffuse mismatch model was employed to predict the TBR of different interfaces which is in good agreement with measurements. Heat transport behavior based on phonon scattering perspective was also discussed to understand the variations of TBR across different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3ω procedure, as 1.42 W/m·K at room temperature. It is believed the presented results could provide useful insights on the thermal management and heat dissipation for SiC devices.

show abstract

Reconstruction of Thermal Boundary Resistance and Intrinsic Thermal Conductivity of SiO2-GaN-Sapphire Structure

Cited by 2 publications

References 0 publications

Enhanced thermal conductivity in percolating nanocomposites: a molecular dynamics investigation

Enhanced thermal conductivity in percolating nanocomposites: a molecular dynamics investigation

Thermal boundary resistance measurement and analysis across SiC/SiO2 interface

Contact Info

Product

Resources

About