Thermal boundary resistance measurement and analysis across SiC/SiO2 interface

Abstract

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO2 was characterized by using transmission electron microscopy and X-ray diffraction. The TBR is measured as 8.11×10 -8 m 2 K/W by 3ω method.Furthermore, the diffuse mismatch model was employed to predict the TBR of different interfaces which is in good agreement with measurements. Heat transport behavior based on phonon scattering perspective was also discussed to understand the variations of TBR across different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3ω procedure, as 1.42 W/m·K at room temperature. It is believed the presented results could provide useful insights on the thermal management and heat dissipation for SiC devices.

Electrical and thermal characterisation of liquid metal thin-film Ga$$_2$$O$$_3$$–SiO$$_2$$ heterostructures

“…One of the aspects that contributes to the thermal resistance across an interface is the mismatch of the vibrational density of states (VDOS) between the two materials 46 , 47 . Among the three considered materials—Ga O , SiO and Si, the pair with the largest VDOS overlap is Ga O /SiO , while the pair with the lowest is SiO /Si 10 , 48 . This suggests that a TBR between Ga O and silicon (without SiO as interlayer) could still be low (comparable or lower than between SiO and Si).…”

A Review on Phonon Transport within Polycrystalline Materials

“…On the other hand, challenges lie in measuring a single GB within a 3D bulk material. Experimentally, 𝑅 𝐾 of nonmetal-nonmetal interfaces are either directly measured for the interface between a thin film and its grown substrate, [24,[133][134][135] or extracted from analyzing the measured cross-plane 𝑘 of a multilayered thin film. [136] For fundamental studies, the impact of interfacial defects and other factors can be examined and the measured 𝑅 𝐾 can be directly compared with model predictions or between different interfaces.…”

“…[136] For fundamental studies, the impact of interfacial defects and other factors can be examined and the measured 𝑅 𝐾 can be directly compared with model predictions or between different interfaces. [135] These thin films, formed by epitaxy/hetero-epitaxy growth or deposition, may have quite different interface properties from those in a nanostructured bulk material that is often synthesized by hot pressing nanoparticles into the bulk form. [1,79,80,137] Therefore, the developed 𝑅 𝐾 modeling may not be applicable to general nanostructured materials synthesized by different techniques.…”

Observation of suppressed diffuson and propagon thermal conductivity of hydrogenated amorphous silicon films

“…[10][11][12][13][14] The performance and reliability of semiconductor devices largely depend on their operating temperature, dictated by their thermal properties. [15][16][17] This is more important for amorphous materials since their low thermal conductivity 18,19 can result in considerably higher operating temperatures that are detrimental for devices. 20 Therefore, extensive research has been conducted to understand the thermal transport in a-Si films, which report a strong size-dependent thermal conductivity attributed to the contribution of long-mean free path (MFP) propagons.…”