Reconstruction of thermal boundary resistance and intrinsic thermal conductivity of SiO 2 -GaN-sapphire structure and temperature dependence

Wang, Zhaoliang; Sun, Mingman; Yao, Guice; Tang, Dawei; Xu, Ke

doi:10.1016/j.ijthermalsci.2014.08.024

Cited by 9 publications

(7 citation statements)

References 39 publications

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“…149 However, they stated that the output signal was not that sensitive to the TBC value, which resulted in a large uncertainty. In 2014, Wang et al 163 obtained 10 MW m −2 K −1 by TDTR with MOCVD and by the 3ω method 164 . For GaN/ SiO 2 interface, 164 the value was about 15 MW m −2 K −1 , higher than that of GaN/Al 2 O 3 .…”

Section: Gan/simentioning

confidence: 99%

“…In 2014, Wang et al 163 obtained 10 MW m −2 K −1 by TDTR with MOCVD and by the 3ω method 164 . For GaN/ SiO 2 interface, 164 the value was about 15 MW m −2 K −1 , higher than that of GaN/Al 2 O 3 . Though the reported TBC values for GaN/oxides are between 8−15 MW m −2 K −1 , these data may need re-examination because the oxides themselves have large thermal resistance compared with the interfaces, which leads to low sensitivity in the measurement.…”

Section: Gan/simentioning

confidence: 99%

“…Some of the possible reasons for such difference are the migration of oxygen across the interface and phonon inelastic scattering. 164 For all these interfaces, the interfacial nanostructure is unclear, which highlights the importance of detailed materials characterizations in future studies. ZnO was recently studied as a substrate due to its good lattice match with GaN.…”

Section: Gan/simentioning

confidence: 99%

See 2 more Smart Citations

A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces

Feng

Zhou

Cheng

et al. 2023

ACS Appl. Mater. Interfaces

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The emergence of wide and ultrawide bandgap semiconductors has revolutionized the advancement of next-generation power, radio frequency, and opto- electronics, paving the way for chargers, renewable energy inverters, 5G base stations, satellite communications, radars, and light-emitting diodes. However, the thermal boundary resistance at semiconductor interfaces accounts for a large portion of the near-junction thermal resistance, impeding heat dissipation and becoming a bottleneck in the devices’ development. Over the past two decades, many new ultrahigh thermal conductivity materials have emerged as potential substrates, and numerous novel growth, integration, and characterization techniques have emerged to improve the TBC, holding great promise for efficient cooling. At the same time, numerous simulation methods have been developed to advance the understanding and prediction of TBC. Despite these advancements, the existing literature reports are widely dispersed, presenting varying TBC results even on the same heterostructure, and there is a large gap between experiments and simulations. Herein, we comprehensively review the various experimental and simulation works that reported TBCs of wide and ultrawide bandgap semiconductor heterostructures, aiming to build a structure–property relationship between TBCs and interfacial nanostructures and to further boost the TBCs. The advantages and disadvantages of various experimental and theoretical methods are summarized. Future directions for experimental and theoretical research are proposed.

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Section: Gan/simentioning

confidence: 99%

Section: Gan/simentioning

confidence: 99%

Section: Gan/simentioning

confidence: 99%

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A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces

Feng

Zhou

Cheng

et al. 2023

ACS Appl. Mater. Interfaces

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“…Nonlinear system-bath coupling is non-trivial. The experiments on thermal boundary conductance (interfacial thermal conductance) [65][66][67][68][69][70][71][72][73][74][75][76][77][78] reveal that the inelastic phonon scattering at interface between highly dissimilar materials is the dominant reason for the enhancement of heat current. Additionally, at the interface between similar materials, the suppression of heat current relative to the elastic thermal conductance is also observed [66,77].…”

Section: Conclusion and Discussionmentioning

confidence: 99%

“…In low-dimensional systems, thermal boundary conductance (also referred to as interfacial thermal conductance) becomes increasingly important [2,3,64]. At high temperature, many experimental [65][66][67][68][69][70][71][72][73][74][75][76][77][78], computational [79][80][81][82][83][84][85][86][87][88][89][90][91][92][93], and empirical [94][95][96][97][98] approaches have uncovered that the thermal boundary conductance at weakly bonded interface (or interface between highly dissimilar materials) exceeds the upper bound of elastic thermal conductance and nearly increases linearly with temperature. These results reveal that inelastic phonon scattering at interface contributes significantly to thermal boundary conductance.…”

Section: Introductionmentioning

confidence: 99%

Thermal rectification and negative differential thermal conductance in harmonic chains with nonlinear system-bath coupling

Ding

2016

Phys. Rev. E

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Thermal rectification and negative differential thermal conductance were realized in harmonic chains in this work. We used the generalized Caldeira-Leggett model to study the heat flow. In contrast to most previous studies considering only the linear system-bath coupling, we considered the nonlinear system-bath coupling based on recent experiment [Eichler et al., Nat. Nanotech. 6, 339 (2011)]. When the linear coupling constant is weak, the multiphonon processes induced by the nonlinear coupling allow more phonons transport across the system-bath interface and hence the heat current is enhanced. Consequently, thermal rectification and negative differential thermal conductance are achieved when the nonlinear couplings are asymmetric. However, when the linear coupling constant is strong, the umklapp processes dominate the multiphonon processes. Nonlinear coupling suppresses the heat current. Thermal rectification is also achieved. But the direction of rectification is reversed compared to the results of weak linear coupling constant.

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Research Progress of Thermal Contact Resistance

et al. 2020

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Reconstruction of thermal boundary resistance and intrinsic thermal conductivity of SiO 2 -GaN-sapphire structure and temperature dependence

Cited by 9 publications

References 39 publications

A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces

A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces

Thermal rectification and negative differential thermal conductance in harmonic chains with nonlinear system-bath coupling

Research Progress of Thermal Contact Resistance

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